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Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells
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Material：
About IEEE Conference Proceedings
Volume： 2016 Issue： VLSI Technology Page： 1-2 Publication year： 2016
JST Material Number： W2441A Document type： Proceedings
Article type： 原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)
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About imperfection
About Epilepsy
About simplification
About NMOS structure
About optimization
About silicon
About penalty
About analog system
About doping
About SRAM
About PMOS structure
About Electrostatics
About gate-all-around structure
About modification
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About 電圧利得
About 選択肢
About ゲートオールアラウンド
Category name(code) classified by JST.
About Signal theory
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About 論理
About アナログ
About RF
About 応用
About スケール
About SRAM
About セル
About 単純化
About ゲートオールアラウンド
About 横方向
About 垂直方向
About ナノワイヤFET
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