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A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS
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About Aouimeur W.
About Univ. Grenoble Alpes, CNRS, IMEP-LAHC, F-38000, France
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About Lepilliet S.
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About Univ. Grenoble Alpes, CNRS, IMEP-LAHC, F-38000, France
About Arnould J.-D.
About Univ. Grenoble Alpes, CNRS, IMEP-LAHC, F-38000, France
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Material：
About IEEE Conference Proceedings
Volume： 2017 Issue： SiRF Page： 60-63 Publication year： 2017
JST Material Number： W2441A Document type： Proceedings
Article type： 原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)
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About balun
About electric power consumption
About linear transformation
About pad
About frequency multiplier
About gain
About frequency band
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About SiGe BiCMOS
Category name(code) classified by JST.
About Other transmission circuit elements
About Frequency conversion circuits
About Semiconductor integrated circuit
Keywords automatically extracted from the title.
About SiGe
About BiCMOS
About Gバンド
About DBM
About 平衡
About 周波数2倍器
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