Art

J-GLOBAL ID：201702236686089437   Reference number：17A0728205

SEM observation and analysis of InGaN/GaN multiple quantum well structure using obliquely polished sample

斜めに研磨された試料を用いたInGaN/GaN多重量子井戸構造体のSEM観測および解析

Author (2)： TANAKA Shigeyasu (Chubu Univ., Aichi, JPN) ,  KARUMI Takahiro (Nagoya Univ., Nagoya, JPN)
Material： Microscopy
Volume： 66  Issue： 2  Page： 131-135  Publication year： Apr. 2017 
JST Material Number： W1384A  ISSN： 2050-5698  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *indium compound ,  gallium compound ,  *nitride ,  *gallium nitride ,  *multiple quantum well ,  *scanning electron microscope ,  *light emitting diode ,  *stress strain characteristic ,  effect ,  piezoelectric effect ,  gallium indium nitride ,  stress-strain ,  *characteristic
Semi thesaurus term： InGaN ,  SEM (microscope) ,  stress-strain relation

JST classification (3)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Microscopy determination of structures  (BK01040E) ,  Piezoelectricity,pyroelectricity,electret  (BM05040M)

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Terms in the title (9)： 研磨 ,  試料 ,  InGaN ,  GaN ,  多重量子井戸 ,  構造体 ,  SEM ,  観測 ,  解析