Art

J-GLOBAL ID：201702259710965150   Reference number：17A1810880

Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm

46と64nmの間の接合径をもつ垂直異方性CoFeB-MgO磁気トンネル接合の高速中性子耐性

Author (10)： NARITA Yuzuru (Yamagata Univ., Yamagata, JPN) ,  TAKAHASHI Yutaka (Yamagata Univ., Yamagata, JPN) ,  HARADA Masahide (Japan Atomic Energy Agency, Ibaraki, JPN) ,  OIKAWA Kenichi (Japan Atomic Energy Agency, Ibaraki, JPN) ,  KOBAYASHI Daisuke (Japan Aerospace Exploration Agency (JAXA), Sagamihara, JPN) ,  HIROSE Kazuyuki (Japan Aerospace Exploration Agency (JAXA), Sagamihara, JPN) ,  SATO Hideo (Tohoku Univ., Sendai, JPN) ,  IKEDA Shoji (Tohoku Univ., Sendai, JPN) ,  ENDOH Tetsuo (Tohoku Univ., Sendai, JPN) ,  OHNO Hideo (Tohoku Univ., Sendai, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 56  Issue： 8  Page： 0802B3.1-0802B3.5  Publication year： Aug. 2017 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *tunnel junction ,  *magnesium oxide ,  *fast neutron ,  exposure test ,  fluence ,  magnetic reluctance ,  boron containing alloy ,  cobalt containing alloy ,  *iron base alloy ,  *radiation resistance (radiation effect) ,  neutron irradiation ,  nuclear reaction ,  *magnetic tunnel junction
Semi thesaurus term： tunneling magnetoresistance

JST classification (2)： Metal-insulator-metal structures  (BM03087F) ,  Irradiational changes of metals  (BK16122N)

Reference (23)：

• Y. Fujisaki, Jpn. J. Appl. Phys. 52, 040001 (2013).
• S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, IEEE Trans. Electron Devices 54, 991 (2007).
• S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, Nat. Mater. 9, 721 (2010).
• D. C. Worledge, G. Hu, P. L. Trouilloud, D. W. Abraham, S. Brown, M. C. Gaidis, J. Nowak, E. J. O’Sullivan, R. P. Robertazzi, J. Z. Sun, and W. J. Gallagher, IEDM Tech. Dig., 2010, p. 296.
• S. H. Kang, Dig. Tech. Pap. Symp. VLSI Technology, 2014, p. 44.

Terms in the title (6)： 垂直 ,  異方性 ,  MgO ,  磁気トンネル接合 ,  高速中性子 ,  耐性