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J-GLOBAL ID：201702264493826653   Reference number：17A1465162

Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating

基板加熱無しでのECR ArプラズマCVDにより形成されたSi/SiGe Alloy/Si(100)ヘテロ構造の電子的性質【Powered by NICT】

Author (5)： Ueno Naofumi (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sakuraba Masao (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Osakabe Yoshihiro (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Akima Hisanao (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sato Shigeo (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 55-62  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： By using our low-energy Ar pla...

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Thesaurus term： plasma exposure ,  rectification (electric) ,  *silicon ,  carrier density ,  substrate temperature ,  valence band ,  *plasma CVD ,  heterojunction ,  *plasma ,  *Argon ,  photoluminescence ,  carrier mobility ,  epitaxy ,  Hall mobility ,  *hetero-structure

Author keywords (6)： Plasma chemical vapor deposition ,  Heteroepitaxial growth ,  Silicon ,  Silicon-germanium alloy ,  Valence band ,  pn junction diode

JST classification (3)： Materials of solid-state devices  (NC03020K) ,  Photometry and photodetectors in general  (BD07031F) ,  Semiconductor thin films  (BK14040E)

Terms in the title (7)： Ar ,  プラズマCVD ,  Si ,  SiGe ,  ヘテロ構造 ,  電子 ,  性質