Art

J-GLOBAL ID：201702280184252554   Reference number：17A0955213

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

超低電力もののインターネットのための短絡回路電流の非常に小さいトンネルフィンFET CMOSインバータ

Author (13)： MORITA Yukinori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKUDA Koichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Yongxun (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORI Takahiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIZUBAYASHI Wataru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI Shin-ichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKETA Hiroshi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTSUKA Shintaro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIGITA Shinji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ENDO Kazuhiko (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 56  Issue： 4S  Page： 04CD19.1-04CD19.5  Publication year： Apr. 2017 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  *tunnel effect ,  *silicon ,  semiconductor ,  *complementary metal oxide semiconductor ,  *inverter ,  short circuit current ,  consumed electric power ,  *internet ,  epitaxy ,  electric current
Semi thesaurus term： *FinFET ,  drain current ,  short circuit current ,  ultra-low power

JST classification (1)： Transistors  (NC03070N)

Reference (31)：

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• S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008).
• C. W. Yeung, A. Padilla, T.-J. K. Liu, and C. Hu, Symp. VLSI Tech. Dig., 2009, p. 176.

Terms in the title (6)： 低電力 ,  もののインターネット ,  短絡回路電流 ,  トンネル ,  フィンFET ,  CMOSインバータ