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Time-resolved photoluminescence of Cu(In,Ga)(Se,S)2 thin films and temperature dependent current density-voltage characteristics of their solar cells on surface treatment effect
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About Chantana Jakapan
About Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
About Kato Takuya
About Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa 243-0206, Japan
About Sugimoto Hiroki
About Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa 243-0206, Japan
About Minemoto Takashi
About Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan
Material：
About Current Applied Physics
Volume： 17 Issue： 4 Page： 461-466 Publication year： 2017
JST Material Number： W1579A ISSN： 1567-1739 Document type： Article
Article type： 原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)
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Keywords indexed to the article.
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About solar cell
About current density
About thin film
About quality
About temperature dependence
About voltage
About interface (surface)
About optimization
About surface treatment
About recombination (connection)
About Hydrochloric Acid
About conversion efficiency
About current density-voltage characteristics
About time resolved photoluminescence
About modification
About Cu(InGa)(SeS)2
About Thin-film solar cell
About Time-resolved photoluminescence
About KCN treatment
About HCl treatment
About Thiuorea treatment
Category name(code) classified by JST.
About Solar cell
Keywords automatically extracted from the title.
About Cu
About Ga
About Se
About 薄膜
About 時間分解光ルミネセンス
About 表面処理
About 太陽電池
About 温度依存性
About 電流密度-電圧特性
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