Art

J-GLOBAL ID：201702286882171609   Reference number：17A1810907

Effect of ion-beam irradiation on the epitaxial growth of graphene via the SiC surface decomposition method

SiCの表面分解法によるグラフェンのエピタキシャル成長に対するイオンビーム照射の効果

Author (6)： ISHII Junko (Kyushu Inst. of Technol., Kitakyushu, JPN) ,  ISHII Junko (Kitakyushu Coll., Kitakyushu, JPN) ,  MIYAWAKI Yasuhiro (Kyushu Inst. of Technol., Kitakyushu, JPN) ,  YAMASAKI Takayuki (Kyushu Inst. of Technol., Kitakyushu, JPN) ,  IKARI Tomonori (Ube Coll., Yamaguchi, JPN) ,  NAITOH Masamichi (Kyushu Inst. of Technol., Kitakyushu, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 56  Issue： 8  Page： 085104.1-085104.4  Publication year： Aug. 2017 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,  *graphene ,  *epitaxy ,  *ion irradiation ,  argon ,  annealing(heat treatment) ,  angle of incidence ,  angular dependence ,  cleavage reaction ,  surface ,  scanning tunneling microscope ,  low energy electron diffraction ,  Raman spectroscopy ,  vacancy ,  periodic structure ,  monomolecular layer ,  *thin film growth
Semi thesaurus term： bond-breaking ,  low energy electron diffraction ,  surface decomposition method

JST classification (3)： Techniques and equipment of thin film deposition  (BK14020I) ,  Carbon and its compounds  (YB02060D) ,  Applications of electron beams and ion beams  (BD02070X)

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Terms in the title (5)： SiC ,  表面分解法 ,  グラフェン ,  エピタキシャル成長 ,  イオンビーム照射