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Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
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About Bordallo C.
About Imec, Leuven, Belgium
About Martino J.
About LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
About Agopian P.
About LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
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About Rooyackers R.
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Material：
About IEEE Conference Proceedings
Volume： 2016 Issue： S3S Page： 1-3 Publication year： 2016
JST Material Number： W2441A Document type： Proceedings
Article type： 原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)
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About mutual conductance
About Zinc
About analog system
About indium gallium arsenide
About conductance
About electrical low voltage
About source
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About 高温動作
About 低電力化
About 実験研究
About 電圧利得
About トンネル電界効果トランジスタ
Category name(code) classified by JST.
About Transistors
About Diodes
About Bases,metal oxides
Keywords automatically extracted from the title.
About InGaAs
About TFET
About 固有
About 電圧利得
About 組成
About 発生源
About Zn
About 拡散
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