Art

J-GLOBAL ID：201702291705767562   Reference number：17A1221117

Excimer laser annealing for low-voltage power MOSFET

低電圧電力MOSFET用エキシマレーザアニーリング

Author (5)： CHEN Yi (Univ. the Ryukyus, Okinawa, JPN) ,  OKADA Tatsuya (Univ. the Ryukyus, Okinawa, JPN) ,  NOGUCHI Takashi (Univ. the Ryukyus, Okinawa, JPN) ,  MAZZAMUTO Fulvio (LASSE-SCREEN Semiconductor Solutions, Gennevilliers, FRA) ,  HUET Karim (LASSE-SCREEN Semiconductor Solutions, Gennevilliers, FRA)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 55  Issue： 8  Page： 086503.1-086503.5  Publication year： Aug. 2016 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,  *power transistor ,  excimer laser ,  *laser annealing ,  semiconductor junction ,  gate (semiconductor)
Semi thesaurus term： trench gate ,  *power MOSFET

JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Reference (19)：

• M. A. Gajda, S. W. Hodgskiss, L. A. Mounfield, N. T. Irwin, G. E. J. Koops, and R. van Dalen, Proc. Int. Symp. Power Semiconductor Devices and ICs, 2006, p. 112.
• L. Lorenz, G. Deboy, A. Knapp, and M. Marz, Proc. Int. Symp Power Semiconductor Devices and ICs, 1999, p. 3.
• B. J. Baliga, Fundamentals of Power Semiconductor Devices (Springer, New York, 2008) p. 286.
• T. Ito, K. Suguro, M. Tamura, T. Taniguchi, Y. Ushiku, T. Iinuma, T. Itani, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, and T. Kusuda, Ext Abstr. IWJT, 2002, p. 23.
• C. Ortolland, L.-A. Ragnarsson, P. Favia, O. Richard, C. Kerner, T. Chiarella, E. Rosseel, Y. Okuno, A. Akheyar, J. Tseng, J.-L. Everaert, T. Schram, S. Kubicek, M. Aoulaiche, M. J. Cho, P. P. Absil, S. Biesemans, and T. Hoffmann, Proc. VLSI Technology Symp., 2009, p. 38.

Terms in the title (2)： 低電圧 ,  電力MOSFET