Art

J-GLOBAL ID：201802210806066614   Reference number：18A0910886

Simulation study of short-channel effects of tunnel field-effect transistors

トンネル電界効果トランジスタの短チャネル効果シミュレーション

Author (11)： FUKUDA Koichi (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  ASAI Hidehiro (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  HATTORI Junichi (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  MORI Takahiro (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  MORITA Yukinori (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  MIZUBAYASHI Wataru (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  MIGITA Shinji (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  ENDO Kazuhiro (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 57  Issue： 4S  Page： 04FD04.1-04FD04.4  Publication year： Apr. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  *short channel effect ,  *Computer Simulation ,  *tunnel effect ,  *band structure ,  film thickness ,  characteristic ,  *interband tunneling ,  *electronic band structure ,  *computer application ,  *utilization
Semi thesaurus term： *tunnel field effect transistor ,  *device simulation ,  EOT ,  device characteristic

JST classification (2)： Transistors  (NC03070N) ,  Electrical properties of interfaces in general  (BM03081H)

Terms in the title (3)： トンネル電界効果トランジスタ ,  短チャネル効果 ,  シミュレーション