Art

J-GLOBAL ID：201802211154392540   Reference number：18A0116268

Replication of Random Telegraph Noise by Using a Physical-Based Verilog-AMS Model

物理ベースのVerilog-AMSモデルを用いたランダム電信雑音の複製

Author (6)： KOMAWAKI Takuya (Graduate School of Science and Technology, Kyoto Institute of Technology) ,  YABUUCHI Michitarou (Graduate School of Science and Technology, Kyoto Institute of Technology) ,  KISHIDA Ryo (Graduate School of Science and Technology, Kyoto Institute of Technology) ,  FURUTA Jun (Graduate School of Science and Technology, Kyoto Institute of Technology) ,  MATSUMOTO Takashi (VLSI Design and Education Center (VDEC), The University of Tokyo) ,  KOBAYASHI Kazutoshi (Graduate School of Science and Technology, Kyoto Institute of Technology)
Material： IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences (Web)  (IEICE Trans Fundam Electron Commun Comput Sci (Web))
Volume： E100.A  Issue： 12  Page： 2758-2763(J-STAGE)  Publication year： 2017 
JST Material Number： U0466A  ISSN： 1745-1337  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *hardware description language ,  *noise (signal) ,  solid state device ,  *analog circuit ,  carrier capture ,  voltage ,  direct voltage ,  MOSFET ,  boundary layer ,  dielectric material ,  voltage fluctuation ,  gate dielectric film ,  electric current ,  ring oscillator ,  frequency fluctuation ,  Verilog ,  nano-device ,  interface layer ,  telegraph noise ,  induced voltage ,  threshold voltage ,  charge trapping ,  layer
Semi thesaurus term： *Verilog-AMS ,  drain current ,  *ランダム電信雑音 ,  high-k material ,  charge trapping

Author keywords (3)： Random Telegraph Noise ,  reliability ,  Verilog-AMS

JST classification (1)： Noise in general  (ND04010J)

Reference (18)：

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Terms in the title (4)： 物理 ,  モデル ,  電信雑音 ,  複製