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J-GLOBAL ID:201802229125008082   Reference number:18A1700625

THVPE法を用いたN極性GaNの高温成長

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Material:
Volume: 79th  Page: ROMBUNNO.21p-146-3  Publication year: Sep. 05, 2018 
JST Material Number: Y0055B  ISSN: 2758-4704  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor thin films 
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