Art
J-GLOBAL ID:201802234509367238   Reference number:18A1330589

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

リモート酸素プラズマを用いて形成されたGa酸化物/GaN界面のエネルギーバンド構造と電気特性
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Material:
Volume: 57  Issue: 6S3  Page: 06KA05.1-06KA05.5  Publication year: Jun. 2018 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
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JST classification (2):
JST classification
Category name(code) classified by JST.
Oxide thin films  ,  Electrical properties of interfaces in general 

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