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J-GLOBAL ID：201802247660265674   Reference number：18A0615618

Novel pathways for elimination of chlorine atoms from growing Si(100) surfaces in CVD reactors

CVD反応器中のSi(100)表面の成長からの塩素原子の除去のための新しい経路【Powered by NICT】

Author (4)： Kunioshi Nilson (Graduate School of Creative Science and Engineering, Waseda University, Japan) ,  Hagino Sho (Graduate School of Creative Science and Engineering, Waseda University, Japan) ,  Fuwa Akio (Graduate School of Creative Science and Engineering, Waseda University, Japan) ,  Yamaguchi Katsunori (Graduate School of Creative Science and Engineering, Waseda University, Japan)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 441  Page： 773-779  Publication year： 2018 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Reactions leading to eliminati...

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Thesaurus term： cluster ,  passivation ,  activation energy ,  desorption ,  gas phase ,  chemical species ,  silicon ,  *chemical reactor ,  epitaxy ,  adsorbed species ,  *Silicon(100) ,  modification

Author keywords (3)： Silicon epitaxial growth ,  Reaction dynamics ,  Surface chemistry

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Electronic structure of surfaces  (BM02080J)

Terms in the title (6)： CVD ,  反応器 ,  Si ,  成長 ,  塩素原子 ,  経路