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J-GLOBAL ID：201802257885882740   Reference number：18A1420677

Analysis of Gas Phase Reaction Pathways for InN Metal Organic Vapor Phase Epitaxy

InN金属有機気相エピタクシーの気相反応経路の解析

Author (6)： Sone Junji (Faculty of Engineering, Tokyo Polytechnic University) ,  Uematsu Kouta (Faculty of Engineering, Tokyo Polytechnic University) ,  Matsufuji Yuuki (Faculty of Engineering, Tokyo Polytechnic University) ,  Oshima Masato (Faculty of Engineering, Tokyo Polytechnic University) ,  Yamada Katsumi (Faculty of Engineering, Tokyo Polytechnic University) ,  Higashi Masahiro (Faculty of Science, University of the Ryukyus)
Material： Journal of Chemical Engineering of Japan  (J Chem Eng Jpn)
Volume： 51  Issue： 7  Page： 605-608(J-STAGE)  Publication year： 2018 
JST Material Number： S0629A  ISSN： 0021-9592  CODEN： JCEJAQ  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *indium nitride ,  *MOCVD ,  vapor phase growth ,  *reaction kinetics ,  surface reaction ,  chemical reaction ,  density functional method ,  reaction path ,  gas phase reaction ,  reactant
Semi thesaurus term： *organometallic vapor phase epitaxy ,  vapor phase epitaxy ,  chemical kinetics

Author keywords (12)： Metalorganic Vapor Phase Epitaxy ,  Computer Simulation ,  Nitrides ,  Reaction Pathways ,  Gas Phase ,  Density Functional Theory ,  Metalorganic Vapor Phase Epitaxy ,  Computer Simulation ,  Nitrides ,  Reaction Pathways ,  Gas Phase ,  Density Functional Theory

JST classification (2)： Chemical reaction engineering,chemical kinetics  (XE01020M) ,  Salts  (CD01050V)

Reference (11)：

• Hirako, A., K. Kusakabe and K. Ohkawa; “Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH₃/H₂ System: A Computational Fluid Dynamics Simulation Study,” Jpn. J. Appl. Phys., 44, 874-879 (2005)
• Kangawa, Y., T. Akiyama, T. Ito, K. Shiraishi and T. Nakayama; “Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach,” Materials (Basel), 6, 3309-3360 (2013)
• Liu, Y. H., T. Kimura, T. Shimada, M. Hirata, M. Wakaba, M. Nakao, S. Ji and T. Matsuoka; “MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor,” Phys. Status Solidi, 6(S2), S381-S384 (2009)
• Matsuoka, T.; “Nitride Semiconductors for Blue Lasers,” Proc. SPIE, 6050, 60500K1-60500K9, Sapporo, Japan (2006)
• Parikh, R. P. and R. A. Adomaitis; “An Overview of Gallium Nitride Growth Chemistry and Its Effect on Reactor Design: Application to a Planetary Radial-Flow CVD System,” J. Cryst. Growth, 286, 259-278 (2006)

Terms in the title (5)： InN ,  金属有機気相エピタクシー ,  気相 ,  反応経路 ,  解析