Art

J-GLOBAL ID：201802268250468744   Reference number：18A2209494

Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface

Ir触媒表面で励起したNOガスによるZnO膜への窒素ドープ効果

Author (7)： SAITO TARO (長岡技科大) ,  ADACHI YUDAI (長岡技科大) ,  IBA RYUTA (長岡技科大) ,  ONO SHOTARO (長岡技科大) ,  OISHI KOICHIRO (長岡工高専) ,  KATAGIRI HIRONORI (長岡工高専) ,  YASUI KANJI (長岡技科大)
Material： 電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))
Volume： 118  Issue： 276(CPM2018 41-53)  Page： 5-9  Publication year： Oct. 25, 2018 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *zinc oxide ,  *semiconductor thin film ,  *doping ,  nitrogen ,  catalytic reaction ,  iridium ,  nitrogen monoxide ,  chemical vapor deposition ,  X-ray diffraction ,  Hall mobility ,  X-ray photoelectron spectroscopy

JST classification (1)： Semiconductor thin films  (BK14040E)

Reference (11)：

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Terms in the title (6)： IR ,  触媒 ,  励起 ,  NO ,  ZnO ,  窒素ドープ