Art

J-GLOBAL ID：201802273028916889   Reference number：18A1330572

Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties

リモート酸素プラズマによる酸化ガリウム/窒化ガリウム界面の低温形成と界面特性

Author (14)： YAMAMOTO Taishi (Nagoya Univ., Nagoya, JPN) ,  YAMAMOTO Taishi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  TAOKA Noriyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  OHTA Akio (Nagoya Univ., Nagoya, JPN) ,  TRUYEN Nguyen Xuan (Nagoya Univ., Nagoya, JPN) ,  TRUYEN Nguyen Xuan (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  YAMADA Hisashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  TAKAHASHI Tokio (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  IKEDA Mitsuhisa (Nagoya Univ., Nagoya, JPN) ,  MAKIHARA Katsunori (Nagoya Univ., Nagoya, JPN) ,  SHIMIZU Mitsuaki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN) ,  SHIMIZU Mitsuaki (Nagoya Univ. Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya, JPN) ,  MIYAZAKI Seiichi (Nagoya Univ., Nagoya, JPN) ,  MIYAZAKI Seiichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Nagoya, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 57  Issue： 6S2  Page： 06JE01.1-06JE01.5  Publication year： Jun. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *plasma production ,  *plasma ,  *gallium oxide ,  *gallium nitride ,  interface (surface) ,  low temperature production ,  *characteristic ,  atomic force microscope ,  surface ,  X-ray photoelectron spectroscopy ,  binding energy ,  Photoelectron Spectroscopy ,  *oxygen plasma ,  semiconductor surfaces ,  photoemission yield spectroscopy ,  *remote plasma
Semi thesaurus term： *remote plasma ,  *surface characteristics

JST classification (3)： Oxide thin films  (BK14050P) ,  Surface structure of semiconductors  (BK15030A) ,  Electron spectroscopy  (BM09060K)

Reference (33)：

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• W. Saito, I. Omura, T. Ogura, and H. Ohashi, Solid-State Electron. 48, 1555 (2004).

Terms in the title (6)： 酸素プラズマ ,  酸化ガリウム ,  窒化ガリウム ,  界面 ,  低温形成 ,  界面特性