Art

J-GLOBAL ID：201802279215655873   Reference number：18A1932651

SrTa₂O₆ induced low voltage operation of InGaZnO thin-film transistors

InGaZnO薄膜トランジスタのSrTa_2O_6誘起低電圧動作【JST・京大機械翻訳】

Author (8)： Takahashi Takanori (National Institute of Technology, Tsuruoka College, Tsuruoka 997-8511, Japan) ,  Takahashi Takanori (Nara Institute of Science and Technology, Ikoma 630-0192, Japan) ,  Hoga Takeshi (National Institute of Technology, Tsuruoka College, Tsuruoka 997-8511, Japan) ,  Miyanaga Ryoko (Nara Institute of Science and Technology, Ikoma 630-0192, Japan) ,  Fujii Mami N. (Nara Institute of Science and Technology, Ikoma 630-0192, Japan) ,  Ishikawa Yasuaki (Nara Institute of Science and Technology, Ikoma 630-0192, Japan) ,  Uraoka Yukiharu (Nara Institute of Science and Technology, Ikoma 630-0192, Japan) ,  Uchiyama Kiyoshi (National Institute of Technology, Tsuruoka College, Tsuruoka 997-8511, Japan)
Material： Thin Solid Films
Volume： 665  Page： 173-178  Publication year： 2018 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： High-k amorphous SrTa<sub>2</s...

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Thesaurus term： leakage current ,  magnetron sputtering ,  mobility(ratio) ,  amorphous state ,  channel ,  gate dielectric film ,  permittivity ,  band gap ,  sputtering ,  *thin film ,  *thin film transistor
Semi thesaurus term： サブ閾値スイング ,  閾値電圧 ,  酸化インジウム・ガリウム・亜鉛 ,  *低電圧 , 【Automatic Indexing@JST】

Author keywords (5)： High dielectric constant ,  Strontium tantalum oxide ,  Indium gallium zinc oxide ,  Thin-film transistor ,  Sputtering

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： トランジスタ ,  誘起 ,  低電圧