Art
J-GLOBAL ID:201802280044721809   Reference number:18A0910825

Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

ホウ素系酸化剤を用いた大面積遷移金属ジカルコゲナイド単分子膜への化学的ホールドーピング
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Material:
Volume: 57  Issue: 2S2  Page: 02CB15.1-02CB15.4  Publication year: Feb. 2018 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Crystal structure of metal oxides and chalcogenides  ,  Electric conduction in semiconductors and insulators in general 

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