Art
J-GLOBAL ID：201902237291148482
Reference number：19A2893956
Investigation of forward degradation on 1.2kV-class SBD-wall integrated trench MOSFET
1.2kV SBD内蔵トレンチMOSFETの順方向通電劣化評価
Author (6)：
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Material：
Issue：
EDD-19-075-086/SPC-19-161-172 電子デバイス研究会/半導体電力変換研究会
Page：
19-22
Publication year：
Nov. 28, 2019
JST Material Number：
Z0924B
Document type：
Proceedings
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Measurement,testing and reliability of solid-state devices
Reference (5)：
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S. Soloviev, D. Cherednichenko, Y. Gao, A. Grekov, Y. Ma, and T. S. Sudershan ′′Forward voltage drop degradation in diffused SiC p-i-n diodes′′, Journal of Applied Physics 95, 4376 (2004).
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M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin, and H. Lendenmann :′′Recombination-enhanced defect motion in forward-biased 4H-SiC p-n diodes′′, Journal of Applied Physics 92, 4699 (2002).
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Y. Kobayashi, N.Ohse, T. Morimoto, M. Kato, T. Kojima, M. Miyazato, M. Takei, H. Kimura, and S. Harada: ′′Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC-SWITCH-MOS′′ 2017 IEEE International Electron Devices Meeting (IEDM), p.211, 2017.
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S. Harada, M. Kato, T. Kojima, K. Ariyoshi, Y. tanaka, and H. Okumura :′′Determination of optimum structure of 4H-SiC Trench MOSFET′′ International Symposium on Power Semiconductor Devices and ICs (ISPSD), p.253, 2012.
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A. Tanaka, H. Matsuhata, N. Kawabata, D. Mori, K. Inoue, M. Ryo, T. Fujimoto, T. Tawara, M. Miyazato, M. Miyajima, K. Fukuda, T. Kato, H. Tsuchida, Y. Yonezawa, and T. Kimoto : Journal of Applied Physics, 119 095711 (2016).
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