Art

J-GLOBAL ID：201202229898026773   Reference number：12A1485719

Determination of optimum structure of 4H-SiC Trench MOSFET

4H-SiCトレンチMOSFETの最適構造の決定

Author (9)： HARADA Shinsuke (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  HARADA Shinsuke (R&D Partnership for Future Power Electronics Technol., Tokyo, JPN) ,  KATO Makoto (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  KOJIMA Takahito (R&D Partnership for Future Power Electronics Technol., Tokyo, JPN) ,  ARIYOSHI Keiko (R&D Partnership for Future Power Electronics Technol., Tokyo, JPN) ,  TANAKA Yasunori (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  TANAKA Yasunori (R&D Partnership for Future Power Electronics Technol., Tokyo, JPN) ,  OKUMURA Hajime (National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  OKUMURA Hajime (R&D Partnership for Future Power Electronics Technol., Tokyo, JPN)
Material： Proceedings. International Symposium on Power Semiconductor Devices and ICs  (IEEE International Symposium on Power Semiconductor Devices & IC's)
Volume： 24th  Page： 253-256  Publication year： 2012 
JST Material Number： W1300A  ISSN： 1943-653X  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,  silicon carbide ,  trench cut(processing) ,  computer simulation ,  on resistance ,  dielectric breakdown ,  semiconductor junction ,  decision
Semi thesaurus term： 4H-SiC ,  device simulation ,  structural determination ,  super junction

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： 4H-SiC ,  トレンチ ,  MOSFET