Art
J-GLOBAL ID:201902290714575526   Reference number:19A1716800

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

4H-SiCパワーデバイス作製のための高濃度,低温,低コストエキシマレーザドーピング【JST・京大機械翻訳】
Author (7):
Material:
Volume: 963  Page: 403-406  Publication year: 2019 
JST Material Number: D0716B  ISSN: 0255-5476  Document type: Article
Article type: 原著論文  Country of issue: Switzerland (CHE)  Language: ENGLISH (EN)
Abstract/Point:
Abstract/Point
Japanese summary of the article(about several hundred characters).
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We developed a novel KrF excim...
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
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Author keywords (4):
JST classification (2):
JST classification
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Properties of ceramics and ceramic whiteware  ,  Manufacturing of glass 
Terms in the title (5):
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