Art

J-GLOBAL ID：201902290714575526   Reference number：19A1716800

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

4H-SiCパワーデバイス作製のための高濃度,低温,低コストエキシマレーザドーピング【JST・京大機械翻訳】

Author (7)： Imokawa Kaname (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku) ,  Kikuchi Toshifumi (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku) ,  Okamoto Kento (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku) ,  Nakamura Daisuke (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku) ,  Ikeda Akihiro (Sojo University, Department of Computer and Information Sciences, Sojo Univ Kumamoto Japan 4-22-1 Ikeda, Nishi-ku) ,  Asano Tanemasa (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku) ,  Ikenoue Hiroshi (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku)
Material： Materials Science Forum  (Mater Sci Forum)
Volume： 963  Page： 403-406  Publication year： 2019 
JST Material Number： D0716B  ISSN： 0255-5476  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Abstract/Point： We developed a novel KrF excim...

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Thesaurus term： *doping ,  *silicon carbide ,  depth profile ,  *excimer laser ,  *low temperature ,  Titanium ,  PN junction ,  laser ablation ,  thin film ,  Aluminum ,  diode ,  contact resistance ,  *laser doping
Semi thesaurus term： *パワーデバイス ,  *4H-SiC , 【Automatic Indexing@JST】

Author keywords (4)： Al Thin Film ,  4H-SiC ,  Excimer Laser Doping ,  PN Junction Diode

JST classification (2)： Properties of ceramics and ceramic whiteware  (YC03030G) ,  Manufacturing of glass  (YC02020O)

Terms in the title (5)： 4H-SiC ,  パワーデバイス ,  作製 ,  高濃度 ,  低温