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J-GLOBAL ID：200901097234782713   Update date: Apr. 17, 2024

Shimura Takayoshi

シムラ タカヨシ | Shimura Takayoshi
Affiliation and department：
Waseda University Graduate School of Information Production and Systems

About Waseda University Graduate School of Information Production and Systems


Job title： Professor
Research field  (6)： Optical engineering and photonics ,  Applied physics - general ,  Quantum beam science ,  Electric/electronic material engineering ,  Crystal engineering ,  Applied materials
Research keywords  (8)： ゲート絶縁膜 ,  X線位相イメージング ,  ゲルマニウム ,  シリコンフォトニクス ,  x-ray imaging ,  electronic materials ,  X線結晶学 ,  X-ray Crystallography
Research theme for competitive and other funds  (45)：
  • 2022 - 2025 局所液相成長によるGeSn細線の形成とレーザーダイオードの動作実証
  • 2018 - 2019 Demonstration of high sensitivity and high resolution X-ray imaging with structured X-ray light source
  • 2013 - 2018 Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties
  • 2016 - 2017 SOIピクセル検出器による自己像直接検出型タルボ・ロー干渉計の高度化
  • 2015 - 2017 Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
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Papers (541)：
  • Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1 1 ̅ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-108251
  • Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-011003
  • Tae-Hyeon Kil, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Design of SiO2/4H-SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing. AIP Advances. 2023. 13. 11. 115304-1-115304-5
  • Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study. Journal of Applied Physics. 2023. 134. 14. 145701-1-145701-9
  • Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping. Applied Physics Express. 2023. 16. 10. 105501-1-105501-4
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MISC (107)：
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Patents (31)：
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Books (9)：
  • Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Waters
    The Physics and Chemistry of SiO<sub>2</sub> and the Si-SiO<sub>2</sub> Interface 4,(The Electrochemical Society, INC) 2000
  • Analysis of Orderd Structure of Buried Oxide Layers in SIMOX Waters
    SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES (]G0001[) (]G0010[)(THE ELECTROCHEMICAL SOCIETY, INC) 1999
  • Advances in the Understanding of Crystal Growth Mechanisms
    Elsevier Science 1997
  • Thermally Oxidized Layers on Si-wafers-Surface X-ray Scattering and Field Ion Microscopy-(共著)
    Advances in the Understanding of Crystal Gronth Mechanisms 1997
  • Structure of thermal Oxide on(111)and(011)Si Wafers(共著)
    Advanced Science and Technology of Silicon Materials 1996
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Lectures and oral presentations  (67)：
  • 犠牲酸化プロセスによる SiC MOSFET の電気特性劣化
    (第71回応用物理学会春季学術講演会 2024)
  • Si基板上GeSn細線のレーザー溶融結晶化における下地SiO2膜厚とレーザー走査速度の最適化
    (第71回応用物理学会春季学術講演会 2024)
  • 低温追酸化によるSiO2/SiC界面発光中心の密度制御と電気特性との相関
    (第71回応用物理学会春季学術講演会 2024)
  • 第一原理計算に基づく4H-SiC中酸素関連欠陥の系統的調査
    (第71回応用物理学会春季学術講演会 2024)
  • Optimization of Laser Scanning Conditions and Thickness of SiO2 Underlayer in Laser-induced Liquid-phase Crystallization of GeSn Wires on Si substrates
    (2024)
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Works (6)：
  • ガラス基板表面の核形成点制御による大粒径多結晶薄膜形成法の開発
    2004 -
  • 原子論的生産技術の創出拠点
    2004 -
  • X線を用いた酸化Siナノ構造の歪みの定量解析
    1999 -
  • ナノメータ・デバイス対応のSOIウェーハに対する極限評価技術の開発
    1999 -
  • Characterization of Oxidized Si Nano-structure by X-ray Dittraction
    1999 -
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Professional career (1)：
  • Ph.D(Eng.) (Nagoya University)
Work history (13)：
  • 2024/04 - 現在 Osaka University
  • 2024/04 - 現在 Waseda University Graduate School of Information Production and Systems Professor
  • 2020/04 - 2024/03 Osaka University Graduate School of Engineering . Associate Professor
  • 2007/01 - 2024/03 Osaka University, Associate Professor
  • 2007/04/01 - 2020/03/31 Osaka University Graduate School of Engineering Division of Science and Biotechnology Associate Professor
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Awards (4)：
  • 2016/09 - 公益社団法人 応用物理学会 第8回(2016年秋季)応用物理学会 Poster Award
  • 2016/03 - 応用物理学会 第7回(2016年春季)応用物理学会 Poster Award
  • 2014/03 - 応用物理学会 第3回(2014年春季)応用物理学会 Poster Award
  • 2008/11 - The Japan Society of Applied Physics, Japan 2008 IWDTF Best Poster Award
Association Membership(s) (11)：
日本放射光学会 ,  応用物理学会 ,  日本結晶学会 ,  日本物理学会 ,  The Japanese Society for Synchrotron Radiation Research ,  The Japan Society of Applied Physics ,  The Crystallographic Society of Japan ,  The Physical Society of Japan ,  放射光学会 ,  結晶学会 ,  物理学会
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