Rchr
J-GLOBAL ID：201801011638920964   Update date: Apr. 17, 2024

Oishi Toshiyuki

オオイシ トシユキ | Oishi Toshiyuki
Affiliation and department：
Saga University Faculty of Science and Engineering

About Saga University Faculty of Science and Engineering


Homepage URL  (1)： http://www.ee.saga-u.ac.jp/sedlab/index.htm
Research field  (3)： Electronic devices and equipment ,  Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (10)： Wireless Power Transfer ,  Gallium Oxide ,  Diamond ,  Gallium Nitride ,  Wide Bandgap Semiconductor ,  Process technologies ,  Device modeling ,  Device and material characteristics ,  High frequency high power devices ,  Electronic devices
Research theme for competitive and other funds  (4)：
  • 2022 - 2025 Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
  • 2021 - 2024 Analysis of Physical Mechanism for GaN Semiconductors Traps by AC Two Port Network
  • 2019 - 2022 Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate
  • 2015 - 2018 Study on super wide band gap semiconductor toward fabrication of high power electric devices operating at high frequency
Papers (287)：
  • Toshiyuki Oishi, Shiori Takada, Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka. Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors. Japanese Journal of Applied Physics. 2024. 63. 1. 010905-010905
  • Niloy Chandra Saha, Tomoki Shiratsuchi, Toshiyuki Oishi, Makoto Kasu. Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 10. 1704-1707
  • Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, Makoto Kasu. Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 6. 975-978
  • Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, Makoto Kasu. Fast Switching NO2-Doped p-Channel Diamond MOSFETs. IEEE Electron Device Letters. 2023. 44. 5. 793-796
  • Yutaro Yamaguchi, Toshiyuki Oishi. Quasi-Physical Equivalent Circuit Model of RF Leakage Current in Substrate Including Temperature Dependence for GaN-HEMT on Si. IEEE Transactions on Microwave Theory and Techniques. 2023. 71. 5. 1945-1956
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MISC (51)：
  • 西村 匠史, 田渕 将也, 山口 裕太郎, 大塚 友絢, 新庄 真太郎, 山中 宏治, 大石 敏之. GaN HEMTの小信号等価回路解析による深い準位の評価-Evaluation of deep level by small signal equivalent circuit analysis of GaN HEMT-放送技術. 映像情報メディア学会技術報告 = ITE technical report. 2021. 45. 1. 5-8
  • Study on small signal equivalent circuit for buffer traps to reproduce low frequency Y parameters in GaN HEMT. Record of Joint Conference of Electrical and Electronics Engineers in Kyushu. 2020. 2020. 337-337
  • Kasu Makoto, Sdoeung Sayleap, Sasaki Kohei, Oishi Toshiyuki, Kawasaki Katsumi, Hirabayashi Jun, Kuramata Akito. Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope. JSAP Annual Meetings Extended Abstracts. 2020. 2020.2. 2362-2362
  • 橋川 誠, 浦田 幸佑, 竹ノ畑 拓海, 大石 敏之, 大島 孝仁. β-Ga2O3 SBDを利用したRF-DC変換回路における負荷抵抗と電極面積依存性-Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit-レーザ・量子エレクトロニクス. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2019. 119. 304. 25-28
  • 石松 裕真, 舟木 浩祐, 桝谷 聡士, 宮崎 恭輔, 大島 孝仁, 嘉数 誠, 大石 敏之. NO2ホールドーピング水素終端ダイヤモンドMOS FETのDCストレス評価 (電子デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2017. 117. 331. 69-72
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Patents (153)：
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Books (2)：
  • 素子分離技術総論
    2000
  • 2000 半導体テクノロジー大全
    電子ジャーナル 2000
Lectures and oral presentations  (273)：
  • GaN HEMTのGaNトラップのY22/Y21信号と過渡応答特性比較-マルチバイアスでの比較-
    (2024年電子情報通信学会総合大会 2024)
  • ダイヤモンドNO2 p 型ドープMOSFET の長時間(100h)AC ストレス測定
    (第84回応用物理学会春季学術講演会 2023)
  • S パラメータの周波数依存性を用いたトランジスタ動作時におけるGaN HEMT のトラップとRF 特性の同時評価
    (第84回応用物理学会春季学術講演会 2023)
  • ノーマリオフ型EID AlGaN/GaN MOS-HEMT における膜中残留応力が電気的特性に与える影響のTCAD による検討
    (第84回応用物理学会春季学術講演会 2023)
  • GaN HEMT 中のトラップ位置と低周波Y21/Y22 虚部の関係(デバイスシミュレーションによる検討)
    (第84回応用物理学会春季学術講演会 2023)
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Works (48)：
  • 窒化物半導体装置およびその製造方法
    2013 - 2013
  • Semiconductor device and manufacturing method thereof
    T.Oishi, Y.Yamamoto, H.Otsuka, K.Yamanaka, A.Inoue 2012 - 2012
  • 半導体装置の製造方法
    2012 - 2012
  • 窒化物半導体装置の製造方法
    2011 - 2011
  • Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
    T.Nanjo, M.Suita, Y.Abe, T.Oishi, Y.Tokuda 2011 - 2011
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Education (2)：
  • 1984 - 1986 Kyoto university Faculty of Engineerig Electrical Engineering
  • 1980 - 1984 Kyoto University Graduate School of Engineerigng Electrical Engineering
Professional career (1)：
  • 博士(工学) (名古屋大学)
Work history (2)：
  • 2014/03 - 現在 Saga university Department of Electrical and Electronic Engineering
  • 1986/04 - 2014/03 Mitsubishi Electric Corporation
Association Membership(s) (3)：
IEEE ,  THE JAPAN SOCIETY OF APPLIED PHYSICS ,  THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
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