Unique behavior of F-centers in high-k Hf-based oxides
(23rd International Conference on Defects in Semiconductors)
Charge trapping by oxygen-related defects in HfO2-based high-k gate dielectrics
(43rd Annual IEEE International Reliability Physics Symposium)
Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics
(International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4))
Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams
(International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4))
Nommiformity in ultrathin SiO2 on Si(111) characterized by conductive atomic force microscopy
(International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4))
