研究者
J-GLOBAL ID：201901014637498726   更新日: 2024年01月30日

張 旭芳

Zhang Xufang
所属機関・部署：
金沢大学 ナノマテリアル研究所

金沢大学 ナノマテリアル研究所 について


職名： 特任助教
研究分野 (1件)： 薄膜、表面界面物性
研究キーワード (2件)： SiC,diamond MOS界面評価 ,  パワー半導体
競争的資金等の研究課題 (1件)：
  • 2020 - 2022 ダイヤモンド反転型MOSFETにおけるチャネル移動度の制約因子の解明
論文 (14件)：
  • Kazuki Kobayashi, Xufang Zhang, Toshiharu Makino, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Christoph E. Nebel, Norio Tokuda. Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (1 1 1) by homoepitaxial lateral growth. Applied Surface Science. 2022. 593
  • Yuta Nakano, Xufang Zhang, Kazuki Kobayashi, Tsubasa Matsumoto, Takao Inokuma, Satoshi Yamasaki, Christoph E. Nebel, Norio Tokuda. Impact of nitrogen doping on homoepitaxial diamond (111) growth. Diamond and Related Materials. 2022. 125
  • Yue Takamori, Masatsugu Nagai, Taira Tabakoya, Yuto Nakamura, Satoshi Yamasaki, Christoph E. Nebel, Xufang Zhang, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda. Insight into temperature impact of Ta filaments on high-growth-rate diamond (100) films by hot-filament chemical vapor deposition. Diamond and Related Materials. 2021. 118
  • Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, et al. Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method. Carbon. 2020. 168. 659-664
  • Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, Norio Tokuda. Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method. Applied Physics Letters. 2020. 117. 9
もっと見る
MISC (1件)：
  • Xufang Zhang, Tsubasa Matsumoto, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, Norio Tokuda. Inversion-type p-channel diamond MOSFET issues. Journal of Materials Research. 2021
講演・口頭発表等 (9件)：
  • Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps
    (International Conference on Silicon Carbide and Related Materials 2019 2019)
  • Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method
    (International Conference on Silicon Carbide and Related Materials 2019 2019)
  • Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias
    (International Conference on Silicon Carbide and Related Materials 2019 2019)
  • Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs
    (International Conference on Silicon Carbide and Related Materials 2019 2019)
  • Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides
    (International Conference on Silicon Carbide and Related Materials 2019 2019)
もっと見る
学歴 (1件)：
  • 2015 - 2018 筑波大学
経歴 (2件)：
  • 2019/12 - 現在 金沢大学 ナノマテリアル研究所 特任助教
  • 2018/10 - 2019/11 筑波大学 数理物質系 研究員
※　J-GLOBALの研究者情報は、researchmapの登録情報に基づき表示しています。 登録・更新については、こちらをご覧ください。

前のページに戻る

TOP

BOTTOM