研究者
J-GLOBAL ID:202301008466731306
更新日: 2024年08月26日
張 文馨
CHANG WEN HSIN
論文 (17件):
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Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions. Applied Physics Express. 2024
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Mitsuhiro Okada, Yuki Okigawa, Takeshi Fujii, Takahiko Endo, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Yasumitsu Miyata, Tetsuo Shimizu, Toshitaka Kubo, et al. Characterization of band alignment at a metal-MoS2 interface by Kelvin probe force microscopy. Japanese Journal of Applied Physics. 2024
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Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons. Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film. Materials Horizons. 2023. 10. 6. 2254-2261
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Mitsuhiro Okada, Jiang Pu, Yung-Chang Lin, Takahiko Endo, Naoya Okada, Wen-Hsin Chang, Anh Khoa Augustin Lu, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, et al. Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition. ACS Nano. 2022
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Tatsuro Maeda, Kazuaki Oishi, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Tetsuji Shimizu, Akira Endoh, Hiroki Fujishiro, Takashi Koida. Transparent Conductive Oxide (TCO) Gated Ingaas Mosfets for Front-Side Illuminated Short-Wave Infrared Detection. ECS Meeting Abstracts. 2022
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