Takuya Maeda, Yusuke Wakamoto, Shota Kaneki, Hajime Fujikura, Atsushi Kobayashi. Structural and optical properties of epitaxial ScxAl1-xN coherently grown on GaN bulk substrates by sputtering method. Applied Physics Letters. 2024
K. Sano, H. Fujikura, T. Konno, S. Kaneki, S. Ichikawa, K. Kojima. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters. 2024
Masatomo Sumiya, Hajime Fujikura, Yoshitaka Nakano, Shuhei Yashiro, Yasuo Koide, Tohru Honda. Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods. Journal of Crystal Growth. 2024
Masafumi Yokoyama, Fumimasa Horikiri, Hisashi Mori, Taichiro Konno, Hajime Fujikura. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers. Applied Physics Express. 2024
Shota Kaneki, Taichiro Konno, Takeshi Kimura, Kazutaka Kanegae, Jun Suda, Hajime Fujikura. Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse. Applied Physics Letters. 2024
