研究者

J-GLOBAL ID：200901000247895718 更新日: 2020年06月05日

井藤浩志

イトウヒロシ | Itoh Hiroshi

所属機関・部署：
ホームページURL (1件)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H17552864
MISC (5件)：

Hiroshi Itoh, Toshiyuki Fujimoto, Shingo Ichimura. Tip characterizer for atomic force microscopy. REVIEW OF SCIENTIFIC INSTRUMENTS. 2006. 77. 10. 103704-103707
Kazuhiro Yamamoto, Hiroshi Itoh. XPS study of silicon surface after ultra-low-energy ion implantation. SURFACE SCIENCE. 2006. 600. 18. 3753-3756
Yukio Fujiwara, Kouji Kondou, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita. Secondary ion mass spectrometry of organic thin films using metal-cluster-complex ion source. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2006. 45. 33-36. L987-L990
H Itoh, K Nakamura, A Kurokawa, S Ichimura. Initial oxidation process by ozone on Si(100) investigated by scanning tunneling microscopy. SURFACE SCIENCE. 2001. 482. Pt.1. 114-120
MAEDA T, KUROKAWA A, SAKAMOTO K, ANDO A, ITOH H, ICHIMURA S. Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperature. J. Vac. Sci. Technol. B. 2001. 19. 2. 589-592

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