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論文 (128件)
- Takashi Matsuoka, Tetsuya Suemitsu. Nitride Semiconductors Realizing Sustainable Society. 2023 IEEE 10th International Workshop on Metrology for AeroSpace (MetroAeroSpace). 2023. 358-362
- Takashi Matsuoka, Hitoshi Morioka, Satoshi Semboshi, Yukihiko Okada, Kazuya Yamamura, Shigeyuki Kuboya, Hiroshi Okamoto, Tsuguo Fukuda. Properties of ScAlMgO4 as Substrate for Nitride Semiconductors. Crystals. 2023. 13. 3. 449-449
- T. Matsuoka, T. Mitate, S. Mizuno, H. Takahata, T. Tanikawa. N-Polar Gowth of Nitride Semiconductors with MOVPE and its Applications. J. Cryst. Growth. 2023. 65. 127056
- K. Prasertsuk, T. Suemitsu, T. Matsuoka. Reverse bias annealing effects in N-polar GaN/AlGaN metal-insulator-semiconductor high electron mobility transistors. Jpn. J. Appl. Phys. 2022. 61. SA1006
- T. M. Inerbaev, T. Matsuoka, Y. Kawazoe. Optical Band Gap Energy Values in Wurtzite InxGa1-xN. Bulletin of The University of Karaganda-Physics. 2022. 105. 107-116
- V. Suresh Kumar, S. Y. Ji, Y. T. Zhang, K. Shojiki, J. H. Choi, T. Kimura, T. Hanada, R. Katayama, T. Matsuoka. Dependence of the V/III Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. 2020. 20. 5. 2979-2986
- K. Ohnishi, S. Kuboya, T. Tanikawa, T. Iwabuchi, K. Yamamura, N. Hasuike, H. Harima, T. Fukuda, T. Matsuoka. Reuse of ScAlMgO4 Substrates Utilized for Halide Vapor Phase Epitaxy of GaN. Jpn. J. Appl. Phys. 2019. 58. SC. SC1023-1-SC1023-5
- A. Ishibashi, N. Sawamura, T. Matsuoka, H. Kobayashi, T. Kasai. Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell. Transanction of the Materials Research Society of Japan. 2019. 44. 5. 187-191
- T. Matsuoka. Current Status, and Future of Research on Optical and Electrical Semiconductor Devices. IEEE Xplore digital library published in 2019 IEEE 5th International Workshop on Metrology for AeroSpace (MetroAeroSpace). 2019. 154-159
- 谷川 智之, プラスラットスック キャッティウット, 木村 健司, 窪谷 茂幸, 松岡 隆志. 有機金属気相成長法によるN極性窒化物半導体の成長技術. 日本結晶成長学会誌. 2018. 45. 1. n/a
- T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, T. Matsuoka. Three-Dimensional Imaging of Threading Dislocations in GaN Crystals by Two-Photon-excitation Photoluminescence. Appl. Phys. Express. 2018. 11. 3. 031004-1-031004-4
- K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka. N-polar GaN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching. Appl. Phys. Express. 2018. 11. 1. 015503-1-015503-4
- T. Hanada, H. Tajiri, O. Sakata, T. Fukuda, T. Matsuoka. Characterization of the ScAlMgO4 Cleaving Layer by X-Ray Crystal Truncation Rod Scattering. J App. Phys. 2018. 123. 20. 205305-1-205305-8
- A. Ishibashi, T. Matsuoka, R. Enomoto, M. Yasutake. New solar cell and clean unit system platform (CUSP) for earth and environmental science. IOP Conference Series: Earth and Environmental Science. 2017. 93. 1. 012081-1-012081-7
- Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2017. 214. 9. 1607054-1-1607054-8
- Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Matsuoka. Control of impurity concentration in N-polar (000(1)over-bar) GaN grown by metalorganic vapor phase epitaxy. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2017. 254. 8. 1600751
- Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano. Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations. APPLIED PHYSICS EXPRESS. 2017. 10. 8. 082101-1-082101-4
- K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka. N-polar GaN MIS-HEMTs with flat interface grown by optimized MOVPE. 信学技報. 2017. 117. 58. 59-64
- A. Yamamoto, K. Kodama, T. Matsuoka, M. Kuzuhara. Low-temperature (≦ 600oC) Growth of High-quality InXGa1-XN (x ~ 0.3) by Metalorganic Vapor Phase Epitaxy using an NH3 Decomposition Catalyst. Jpn. J. Appl. Phys. 2017. 56. 4. 041001-1-041001-5
- K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, T. Matsuoka. Halide Vapor Phase Epitaxy of Thick GaN Films on ScAlMgO4 Substrates and their Self-Separation for Fabricating Free-Standing Wafers. Appl. Phys. Express. 2017. 10. 10. 101001-1-101001-4
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