研究者

J-GLOBAL ID：200901078153445246 更新日: 2022年08月18日

鈴木英一

スズキエイイチ | Suzuki Eiichi

所属機関・部署：
ホームページURL (1件)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=E58408525
競争的資金等の研究課題 (1件)：

1. 微細シリコンデバイス技術 2. 電子材料プロセス技術 3. デバイス材料評価技術

MISC (42件)：

YX Liu, E Sugimata, K Ishii, M Masahara, K Endo, T Matsukawa, H Yamauchi, S O'uchi, E Suzuki. Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 4B. 3084-3087
K Endo, N Shirakawa, Y Yoshida, S Ikeda, T Mino, E Gofuku, E Suzuki. Deoxidization of Cu oxide under extremely low oxygen pressure ambient. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2006. 45. 12-16. L393-L395
K Endo, S Noda, M Masahara, T Kubota, T Ozaki, SJ Samukawa, YX Liu, K Ishii, Y Ishikawa, E Sugimata, et al. Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2006. 45. 8-11. L279-L281
M Masahara, YX Liu, K Endo, T Matsukawa, K Sakamoto, K Ishii, S O'uchi, E Sugimata, H Yamauchi, E Suzuki. Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain. APPLIED PHYSICS LETTERS. 2006. 88. 7. 0721031-0721033
Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs):Technological challenges and future developments. IEEJ Transactions on Electrical and Electronics Engineering. 2006

もっと見る

※　J-GLOBALの研究者情報は、researchmapの登録情報に基づき表示しています。登録・更新については、こちらをご覧ください。

前のページに戻る

TOP

BOTTOM