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MISC (17件)
- R Kimura, Y Gotoh, T Matsuzawa, K Takahashi. High-purity cubic GaN grown on a AlGaAs buffer layer by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH. 2000. 209. 2-3. 382-386
- Ryuhei Kimura, Takuhei Mouri, Tokio Nakada, Shigeru Niki, Akimasa Yamada, Paul Fons, Takeo Matsuzawa, Kiyoshi Takahashi, Akio Kunioka. Effects of sodium on CuIn3Se5 Thin Films. Jpn. J. Appl. Phys. 1999. 38. 8B. L899-L901
- Photaluminescence Properties of Sodium Incorporated in CuInSe2 Thin Films. Jpn. J. Appl. Phys. 1999. 38. 3B. L289-L291
- R Kimura, Y Gotoh, T Nagai, Y Uchida, T Matsuzawa, K Takahashi, CG Schulz. A study of initial growth mechanism of c-GaN on GaAs(100) by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH. 1998. 189. 406-410
- K Saito, Y Watanabe, K Takahashi, T Matsuzawa, BS Sang, M Konagai. Photo atomic layer deposition of transparent conductive ZnO films. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 1997. 49. 1-4. 187-193
- Design of Iutelligent Materials for Future Electronics. Traus. of the Materials Research soity of Japan. 1993. 13. 125-129
- 電力用高速サイリスタの設計に関する研究. 1979
- Study for Design of High Speed Power Thyristor. 1979
- 電力用サイリスタにおけるエミッタ短絡効果. 電気学会論文誌. 1978. 98C. 1
- Effects of shorted Emitter in Power thyristor. Trans IEEE Japan. 1978. 98C. 1
- 高速サイリスタのパルス電流耐量. 電気学会論文誌. 1974. 94C. 1
- Pulse Current Capability of High Speed Thyristor. Electrical Engineering in Japan. 1974. 94. 1
- Pulse Current Capability of High Speed Thyristor. Trans. IEEE Japan. 1974. 94C. 1
- 高速サイリスタのオン領域の広がり速度. 電気学会論文誌. 1973. 93C. 2
- Spreading Velocity of the on-state in High Speed Thyristor. Trans. IEEE Japan. 1973. 93C. 2
- Some Electric Characteistics of a Reverse Conducting Thyristor. IEEE, Trans on ED. 1970. 17. 9
- Spreading Velocity of the on-state in High Speed Thyristor. NEC Res, Dev. 3
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