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MISC (164件)
- Charge Transfer between Thermally Deposited α-NPD and Chemical-Vapor-Deposited Homoepitaxial Diamond Films Studied by Hall Measurements. Applied Physics Letters. 2003. 83. 23. 4776-4778
- M Irie, S Endo, CL Wang, T Ito. Fabrication and properties of lateral p-i-p structures using single-crystalline CVD diamond layers for high electric field applications. DIAMOND AND RELATED MATERIALS. 2003. 12. 9. 1563-1568
- Characterization of α-NPD Thermally Deposited on Hydrogen-Terminated Single-Crystal Chemical-Vapor-Deposited Diamond Films. Japanese Journal of Applied Physics. 2003. 42. 8. 5233-5238
- T Teraji, M Katagiri, S Koizumi, T Ito, H Kanda. Ohmic contact formation for n-type diamond by selective doping. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2003. 42. 8A. L882-L884
- T Teraji, S Mitani, T Ito. High rate growth and luminescence properties of high-quality homoepitaxial diamond (100) films. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 2003. 198. 2. 395-406
- M Hamada, T Teraji, T Ito. Field-induced effects of implanted Ga on high electric field diamond devices fabricated by focused ion beam. APPLIED SURFACE SCIENCE. 2003. 216. 1-4. 65-71
- T Ito. Highly efficient electron emissions from single-crystalline CVD diamond surfaces. IEICE TRANSACTIONS ON ELECTRONICS. 2003. E86C. 5. 797-802
- T Ito, T Watanabe, M Irie, J Nakamura, T Teraji. Electron emissions from CVD diamond surfaces. DIAMOND AND RELATED MATERIALS. 2003. 12. 3-7. 434-441
- 辻本 健一, 三谷 諭司, 寺地 徳之, 伊藤 利道. 気相合成ダイヤモンド薄膜上におけるプラチナ薄膜の低温形態変化. 真空. 2003. 46. 9. 703-707
- 気相合成ダイヤモンド薄膜表面導入欠陥のカソードルミネッセンス強度への影響. 真空. 2003. 46. 90-92
- SM Lee, T Ito, H Murakami. X-ray photoelectron spectroscopy characterization and morphology of MgO thin films grown on single-crystalline diamond (100). JOURNAL OF MATERIALS RESEARCH. 2002. 17. 8. 1914-1922
- T Teraji, S Mitani, CL Wang, T Ito. High-rate deposition of high-quality homoepitaxial diamond films. NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY. 2002. 12. 6. 355-368
- CVDダイアモンドからの高効率電子エミッション. 表面科学. 2002. 23,31-37
- Growth of High-Quality Homoepitaxial CVD Diamond Films at High Growth Rate. Journal of Crystal Growth. 2002. 235,287-292
- Growth of High-Quality Homoepitaxial CVD Diamond Films at High Growth Rate. Journal of Crystal Growth. 2002. 235,287-292
- Highly Efficient Electron Emission from chemical-Vapor-Deposited Single-Crystalline Diamond. 2002. 23,31-37
- Hironaru Murakami, Hidehito Asaoka, Kazuo Sakai, Toshimichi Ito, Masayoshi Tonouchi. LT-STM/STS observations on electrical field etched surfaces of YBa2Cu3O7-δ single crystal. Applied Surface Science. 2001. 175-176. 306-311
- SM Lee, H Murakami, T Ito. Properties of thin MgO films grown on single-crystalline CVD diamond. APPLIED SURFACE SCIENCE. 2001. 175. 517-524
- H Murakami, M Yokoyama, SM Lee, T Ito. Photoemission properties and surface structures of homoepitaxially grown CVD diamond(100) surfaces. APPLIED SURFACE SCIENCE. 2001. 175. 474-479
- N Jiang, S Shinjo, T Inaoka, Y Shintani, T Ito, H Makita, A Hatta, A Hiraki. Characterization of N-doped diamond films by transmission electron microscopy. JOURNAL OF CRYSTAL GROWTH. 2001. 224. 1-2. 111-116
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