研究者
J-GLOBAL ID:201801002021861090
更新日: 2024年06月06日 田部井 哲夫
TABEI TETSUO
- Matsuo, Naoto, Heya, Akira, Yamana, Kazushige, Sumitomo, Koji, Tabei, Tetsuo. Influence of the Gate Voltage or the Base Pair Ratio Modulation on the A-DNA FET Performance. IEICE TRANSACTIONS ON ELECTRONICS. 2024. E107C. 3. 76-79
- Aprilia, Lia, Meguro, Tatsuya, Nuryadi, Ratno, Tabei, Tetsuo, Mimura, Hidenori, Kuroki, Shin-Ichiro. Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Mask. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS. 2023. 32. 3. 290-296
- Matsuo, Naoto, Yoshida, Kazuki, Sumitomo, Koji, Yamana, Kazushige, Tabei, Tetsuo. Ambipolar Conduction of lambda-DNA Transistor Fabricated on SiO2/Si Structure. IEICE TRANSACTIONS ON ELECTRONICS. 2022. E105C. 8. 369-374
- 吉田一輝, 松尾直人, 山名一成, 住友弘二, 部家彰, 原田哲男, 田部井哲夫. 軟X線照射によるDNAの放射線損傷の解析. 電子情報通信学会論文誌. 2022. J105-C. 2. 74-77
- Ono, Tatsuyoshi, Hirata, Satoshi, Amemiya, Yoshiteru, Tabei, Tetsuo, Yokoyama, Shin. Long annealing effect on spin Seebeck devices fabricated using CexY3-xFe5O12 deposited by metal-organic decomposition. JAPANESE JOURNAL OF APPLIED PHYSICS. 2018. 57. 4
- Ono, Tatsuyoshi, Hirata, Satoshi, Amemiya, Yoshiteru, Tabei, Tetsuo, Yokoyama, Shin. Anomalous Nernst effect of Ni-Al alloys and application to spin Seebeck devices. JAPANESE JOURNAL OF APPLIED PHYSICS. 2018. 57. 4
- Anri Nakajima, Tetsuo Tabei, Tatsuya Yasukawa. Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices. SCIENTIFIC REPORTS. 2017. 7
- Hirata, Satoshi, Ono, Tatsuyoshi, Amemiya, Yoshiteru, Tabei, Tetsuo, Yokoyama, Shin. Influence of surface smoothing on spin Seebeck effect of Ce1Y2Fe5O12 deposited by metal organic decomposition. JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 4
- T. Tabei, S. Yokoyama. Proposal of a silicon optical modulator based on surface plasmon resonance. SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS III. 2012. 8431
- Tabei, Tetsuo, Hirata, Tomoki, Kajikawa, Kenta, Sunami, Hideo. Potentiality of Metal-Oxide-Semiconductor Silicon Optical Modulator Based on Free Carrier Absorption. JAPANESE JOURNAL OF APPLIED PHYSICS. 2009. 48. 11
- Takashi Kudo, Toshihiro Kasama, Takeshi Ikeda, Yumehiro Hata, Shiho Tokonami, Shin Yokoyama, Takamaro Kikkawa, Hideo Sunami, Tomohiro Ishikawa, Masato Suzuki, et al. Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing. JAPANESE JOURNAL OF APPLIED PHYSICS. 2009. 48. 6
- Kenta Kajikawa, Tetsuo Tabei, Hideo Sunami. An Infrared Silicon Optical Modulator of Metal-Oxide-Semiconductor Capacitor Based on Accumulation-Carrier Absorption. JAPANESE JOURNAL OF APPLIED PHYSICS. 2009. 48. 4
- Tomoki Hirata, Kenta Kajikawa, Tetsuo Tabei, Hideo Sunami. Proposal of a metal-oxide-semiconductor silicon optical modulator based on inversion-carrier absorption. JAPANESE JOURNAL OF APPLIED PHYSICS. 2008. 47. 4. 2906-2909
- T Tabei, K Maeda, S Yokoyama, H Sunami. Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 4B. 3498-3503
- T Tabei, T Miyazaki, Y Nishibayashi, S Yokoyama. Fabrication of high-density diamond nanotips by electron beam lithography. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 3A. 1771-1774
- S Hamayoshi, T Nakamoto, M Wada, K Ohkura, T Tabei, M Ikeda, K Higuchi. Mobility and number fluctuations in MOS structures. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 4B. 2198-2200
- M Suzuki, T Tabei, S Yokoyama, K Miyamoto, T Wada, T Fujii. Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 2. 1130-1131
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