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論文 (24件)
- Taisuke Kageura, Yosuke Sasama, Keisuke Yamada, Kosuke Kimura, Shinobu Onoda, Yamaguchi Takahide. Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers. Carbon. 2024. 229
- Taisuke Kageura, Yosuke Sasama, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Keisuke Yamada, Kosuke Kimura, Shinobu Onoda, Yamaguchi Takahide. Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond. ACS Applied Materials and Interfaces. 2024. 16. 10. 13212-13218
- shozo kono, Kohei Shima, Shigefusa Chichibu, Masaru Shimomura, Taisuke Kageura, Hiroshi Kawarada. Band Alignment and Quality of Al0.6ga0.4n/Aln Films Grown on Diamond (111) Substrate by Remote N-Plasma Assisted Mbe. SSRN Electronic Journal. 2023
- Kageura Taisuke, Sasama Yosuke, Shinei Chikara, Teraji Tokuyuki, Yamada Keisuke, Onoda Shinobu, Yamaguchi Takahide. Charge stability of shallow single nitrogen-vacancy centers in lightly boron-doped diamond. CARBON. 2022. 192. 473-481
- Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures. NATURE ELECTRONICS. 2022. 5. 1. 37-44
- Tetsuya Tatsuishi, Kyotaro Kanehisa, Taisuke Kageura, Takahiro Sonoda, Yuki Hata, Kazuto Kawakatsu, Takashi Tanii, Shinobu Onoda, Alastair Stacey, Shozo Kono, et al. Highly aligned 2D NV ensemble fabrication from nitrogen-terminated (111) surface. CARBON. 2021. 180. 127-134
- Aoi Morishita, Shotaro Amano, Ikuto Tsuyuzaki, Taisuke Kageura, Yasuhiro Takahashi, Minoru Tachiki, Shuuichi Ooi, Miwako Takano, Shunichi Arisawa, Yoshihiko Takano, et al. Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature. Carbon. 2021. 181. 379-388
- Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu, Satoshi Moriyama, Jun-ichi Inoue, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors. JOURNAL OF APPLIED PHYSICS. 2020. 127. 18
- Masayuki Iwataki, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura, Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada. Over 12000 A/cm2 and 3.2 mΩ cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET. IEEE Electron Device Letters. 2020. 41. 1. 111-114
- Kageura Taisuke, Hideko Masakuni, Tsuyuzaki Ikuto, Morishita Aoi, Kawano Akihiro, Sasama Yosuke, Yamaguchi Takahide, Takano Yoshihiko, Tachiki Minoru, Ooi Shuuichi, et al. Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure. SCIENTIFIC REPORTS. 2019. 9. 15214
- Shozo Kono, Taisuke Kageura, Yuya Hayashi, Sung-Gi Ri, Tokuyuki Teraji, Daisuke Takeuchi, Masahiko Ogura, Hideyuki Kodama, Atsuhito Sawabe, Masafumi Inaba, et al. Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001). Diamond and Related Materials. 2019. 93. 105-130
- Kawai Sora, Yamano Hayate, Sonoda Takahiro, Kato Kanami, Buendia Jorge J, Kageura Taisuke, Fukuda Ryosuke, Okada Takuma, Tanii Takashi, Higuchi Taisei, et al. Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers. JOURNAL OF PHYSICAL CHEMISTRY C. 2019. 123. 6. 3594-3604
- Imanishi Shoichiro, Horikawa Kiyotaka, Oi Nobutaka, Okubo Satoshi, Kageura Taisuke, Hiraiwa Atsushi, Kawarada Hiroshi. 3.8W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity. IEEE ELECTRON DEVICE LETTERS. 2019. 40. 2. 279-282
- Kageura Taisuke, Hideko Masakuni, Tsuyuzaki Ikuto, Amano Shotaro, Morishita Aoi, Yamaguchi Takahide, Takano Yoshihiko, Kawarada Hiroshi. Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films. DIAMOND AND RELATED MATERIALS. 2018. 90. 181-187
- Takahide Yamaguchi, Sasama Yosuke, Takeya Hiroyuki, Takano Yoshihiko, Kageura Taisuke, Kawarada Hiroshi. Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures. REVIEW OF SCIENTIFIC INSTRUMENTS. 2018. 89. 10
- Oi Nobutaka, Inaba Masafumi, Okubo Satoshi, Tsuyuzaki Ikuto, Kageura Taisuke, Onoda Shinobu, Hiraiwa Atsushi, Kawarada Hiroshi. Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors. SCIENTIFIC REPORTS. 2018. 8
- Falina Shaili, Kawai Sora, Oi Nobutaka, Yamano Hayate, Kageura Taisuke, Suaebah Evi, Inaba Masafumi, Shintani Yukihiro, Syamsul Mohd, Kawarada Hiroshi. Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing. SENSORS. 2018. 18. 7. 2178-2178
- Creedon, D. L., Jiang, Y., Ganesan, K., Stacey, A., Kageura, T., Kawarada, H., McCallum, J. C., Johnson, B. C., Prawer, S., Jarnieson, D. N. Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond. Physical Review Applied. 2018. 10. 4
- Mohd Syamsul, Nobutaka Oi, Satoshi Okubo, Taisuke Kageura, Hiroshi Kawarada. Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications. IEEE Electron Device Letters. 2018. 39. 1. 51-54
- Masafumi Inaba, Akinori Seki, Kazuaki Sato, Tomoyoshi Kushida, Taisuke Kageura, Hayate Yamano, Atsushi Hiraiwa, Hiroshi Kawarada. Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 2017. 254. 9
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