研究者

J-GLOBAL ID：201801014856168084 更新日: 2021年10月22日

山田永

Yamada Hisashi

MISC (54件)：

Noriyuki Miyata, Hiroyuki Ishii, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama, et al. Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors. MICROELECTRONIC ENGINEERING. 2011. 88. 12. 3459-3461
SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryo Iida, Sunghoon Lee, Ryosho Nakane, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, et al. High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain. APPLIED PHYSICS EXPRESS. 2011. 4. 11
S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, et al. High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering. Digest of Technical Papers - Symposium on VLSI Technology. 2011. 58-59
M. Yokoyama, S. H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, et al. CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding. Digest of Technical Papers - Symposium on VLSI Technology. 2011. 60-61
T. Maeda, Y. Urabe, T. Itatani, H. Ishii, N. Miyata, T. Yasuda, H. Yamada, M. Hata, M. Yokoyama, M. Takenaka, et al. Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs. Digest of Technical Papers - Symposium on VLSI Technology. 2011. 62-63

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