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文献
J-GLOBAL ID：201802264876849769
整理番号：18A0118454 PINダイオードを用いた4.5-/4.9-GHz帯域可変型GaN HEMT高効率電力増幅器
4.5/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches
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引用文献 (11件)
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- M. Kamiyama, R. Ishikawa, and K. Honjo,′′5.65GHz high-efficiency GaN HEMT power amplifier with harmonic treat-ment up to fourth order,′′ IEEE Microw. Wireless Compon. Lett., vol. 22, no. 6 pp. 315-317, Jun. 2012.
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- Kenle Chen, Tsung-Chieh Lee, and Dimitrios Peroulis, ′′Co-design of multi-band high-efficiency power amplifier and three-pole high-Q tunable filter,′′ IEEE Microw. Wireless Compon. Lett., vol.23, no.12, pp.647-649, Dec. 2013.
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