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論文 (67件)
- Heiji Watanabe, Takuma Kobayashi, Hayato Iwamoto, Takato Nakanuma, Hirohisa Hirai, Mitsuru Sometani. Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes. Japanese Journal of Applied Physics. 2025
- Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe. Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs. Applied Physics Letters. 2024
- Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls. IEEE Electron Device Letters. 2024
- Xufang Zhang, Tsubasa Matsumoto, Mitsuru Sometani, Masahiko Ogura, Hiromitsu Kato, Toshiharu Makino, Daisuke Takeuchi, Takao Inokuma, Satoshi Yamasaki, Norio Tokuda. Impact of water vapor annealing treatments on Al2O3/diamond interface. AIP Advances. 2024
- 染谷 満, 大薗 国栄, 紀 世陽, 俵 武志, 森本 忠雄, 加藤 智久, 児島 一聡, 原田 信介. マルチエピ法及びトレンチ埋め戻しエピ法で作製した1.2 kV耐圧SiC SJ-MOSFETの性能比較. 電気学会論文誌C. 2024. 144. 3. 257-262
- Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-108251
- Mitsuru Sometani, Yusuke Nishiya, Ren Kondo, Rei Inohana, Hongyu Zeng, Hirohisa Hirai, Dai Okamoto, Yu-ichiro Matsushita, Takahide Umeda. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface. APL Materials. 2023
- Hiroki Fujimoto, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takayoshi Shimura, Heiji Watanabe. Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation. Applied Physics Express. 2022. 15. 10. 104004-104004
- Takuji Hosoi, Momoe Ohsako, Kidist Moges, Koji Ito, Tsunenobu Kimoto, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors. Applied Physics Express. 2022
- Takato Nakanuma, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces. Japanese Journal of Applied Physics. 2022. 61. {SC}. SC1065-SC1065
- Tetsuo Hatakeyama, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto, Shinsuke Harada. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs. Journal of Applied Physics. 2022. 131. 14. 145701-145701
- Takato Nakanuma, Takuma Kobayashi, Takuji Hosoi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices. Applied Physics Express. 2022. 15. 4. 041002-041002
- Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Investigation of reliability of NO nitrided SiC(1100) MOS devices. 2022 IEEE International Reliability Physics Symposium (IRPS). 2022
- Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda. Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs. Applied Physics Letters. 2022
- Hiroki Sakata, Dai Okamoto, Mitsuru Sometani, Mitsuo Okamoto, Hirohisa Hirai, Shinsuke Harada, Tetsuo Hatakeyama, Hiroshi Yano, Noriyuki Iwamuro. Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method. Japanese Journal of Applied Physics. 2021. 60. 6. 060901-060901
- Shogo Sekine, Masakazu Okada, Teruaki Kumazawa, Mitsuru Sometani, Hirohisa Hirai, Naoya Serizawa, Ryu Hasunuma, Mitsuo Okamoto, Shinsuke Harada. Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation. Japanese Journal of Applied Physics. 2021. 60. {SB}
- Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, et al. Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method. Carbon. 2020. 168. 659-664
- Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, Norio Tokuda. Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method. Applied Physics Letters. 2020. 117. 9
- Hirohisa Hirai, Tetsuo Hatakeyama, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Hajime Okumura, Hiroshi Yamaguchi. Difference in electron mobility at 4H-SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering. Applied Physics Letters. 2020. 117. 4
- Hironori Takeda, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Hiroshi Yano, Heiji Watanabe. Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement. Materials Science Forum. 2020. 1004. 620-626
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