Rchr
J-GLOBAL ID:200901016006169882   Update date: Mar. 31, 2024

Junji Yamanaka

ヤマナカ ジュンジ | Junji Yamanaka
Affiliation and department:
Job title: Associate Professor
Research field  (5): Other ,  Structural and functional materials ,  Metallic materials ,  Electric/electronic material engineering ,  Crystal engineering
Research keywords  (5): Inorganic material ,  Phase Transformation ,  Transmission Electron Microscopy ,  Micro- and Nano- structure ,  semiconductor heterostructures
Research theme for competitive and other funds  (11):
  • 2023 - 2026 構造敏感性をもつ半導体薄膜の歪分布マルチスケール可視化新手法の開発
  • 2021 - 2024 Investigation on the interface states at strained Si/SiO2 interfaces formed on Si(110) substrates
  • 2018 - 2021 Control of defects and surface morphology on strained Si/SiGe/Si(110) structure using the ion implantation method
  • 2015 - 2018 Development of high-mobility strained Si/SiGe/Si(110) heterostructure by suppression of dislocation generation
  • 2013 - 2016 Formation technology development of high quality Ge/Si heterostructures using hydrogen radical
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Papers (124):
  • Junji Yamanaka, Keisuke Arimoto, Takuma Ampo, Yasushi Takahashi. Elemental and Crystallographic Analysis of Trapiche Ruby using Micro X-ray Fluorescence Spectroscopy, X-ray Pole Figure Map, and Low Vacuum Type Field Emission Scanning Electron Microscopy. MICROSCOPY AND MICROANALYSIS. 2023. 29. S1. 2011-2013
  • Junji Yamanaka, Joji Furuya, Kosuke O Hara, Keisuke Arimoto. Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two Condenser-lens TEM, Experimental Study about the Effect of Convergence Angle. MICROSCOPY AND MICROANALYSIS. 2023. 29. S1. 325-327
  • Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto. Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures. Materials Science in Semiconductor Processing. 2023. 161. 107476-107476
  • Keisuke Arimoto, Chihiro Sakata, Kosuke O. Hara, Junji Yamanaka. Crystalline Morphology of SiGe Films Grown on Si(110) Substrates. Journal of Electronic Materials. 2023. 52. 5121-5127
  • Kosuke O. Hara, Chiaya Yamamoto, Junji Yamanaka, Keisuke Arimoto. Semiconducting BaSi2 film synthesis by close-spaced evaporation benefiting from mechanical activation of source powder by ball milling. JJAP Conference Proceedings. 2023. 10. 011101-1-011101-5
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MISC (29):
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Lectures and oral presentations  (116):
  • SiGe / Ge / Si (111)に発生するクラックの方位
    (日本金属学会2024年春期(第174回)講演大会 2024)
  • Feasibility study for the evaluation of SiGe/Si (110) domain tilt using X-ray diffraction reciprocal space mapping and conventional HR-TEM method.
    (The 20th International Microscopy Congress 2023)
  • Elemental and Crystallographic Analysis of Trapiche Ruby using Micro X-ray Fluorescence Spectroscopy, X-ray Pole Figure Map, and Low Vacuum Type Field Emission Scanning Electron Microscopy
    (Microscopy & Microanalysis 2023 2023)
  • Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two Condenser-lens TEM, Experimental Study about the Effect of Convergence Angle
    (Microscopy & Microanalysis 2023 2023)
  • 近接蒸着法により作製したCaSi2薄膜の結晶配向性
    (2023年第70回応用物理学会春季学術講演会 2023)
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Education (3):
  • - 1994 Tokyo Institute of Technology
  • - 1990 Nagoya Institute of Technology
  • - 1988 Nagoya Institute of Technology
Professional career (2):
  • 工学修士 (名古屋工業大学)
  • 博士(工学) (東京工業大学)
Work history (3):
  • 2006/05 - 現在 山梨大学 助教授 大学院医学工学総合研究部(2007年4月より職名変更により准教授)
  • 1997/04 - 現在 山梨大学工学部附属無機合成研究施設(2002.4からクリスタル科学研究センター)助手
  • 1994/04 - 現在 株式会社日産アーク研究部研究員
Committee career (22):
  • 2017/04 - 現在 大学連携研究設備ネットワーク 委員代理
  • 2017/04 - 現在 大学連携研究設備ネットワーク 西関東・甲斐地域委員
  • 2021/04 - 2022/03 国立大学法人機器・分析センター協議会 会員
  • 2021/04 - 2022/03 大学連携研究設備ネットワーク 委員代理
  • 2020/04 - 2021/03 大学連携研究設備ネットワーク 委員代理
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Awards (3):
  • 2013/07 - International Symposium on Sputtering and Plasma Processes (ISSP) 2013 ISSP 2013 Best Poster Award In situ formation of aluminum germanate interlayer for high-k/Ge metal-oxide-semiconductor structure by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
  • 2013/05 - 日本顕微鏡学会 日本顕微鏡学会第69回学術講演会優秀ポスター賞[材料系] 選択エッチングとFE-SEM を活用したFe-Al-Ni合金中B2 析出物の形態観察
  • 2001/03 - Kazato Research Foundation 風戸研究奨励金 難黒鉛化性フラン樹脂炭素の表面黒鉛化
Association Membership(s) (5):
Microscopy Society of America ,  応用物理学会 ,  日本顕微鏡学会 ,  日本金属学会 ,  日本セラミックス協会
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