Rchr
J-GLOBAL ID：200901028199093231
Update date: Apr. 17, 2024
Nakashima Hiroshi
ナカシマ ヒロシ | Nakashima Hiroshi
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Affiliation and department：
National Institute of Technology, Sasebo College
About National Institute of Technology, Sasebo College
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Homepage URL (1)：
http://astec.kyushu-u.ac.jp/nakasima/naka-home.htm
Research field (4)：
Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (6)：
機能性薄膜形成
, 半導体中の格子欠陥
, 半導体プロセス技術
, Functional thin film
, defects in semiconductors
, Semiconductor process technology
Research theme for competitive and other funds (9)：
次世代LSI用高誘電率ゲート絶縁膜の開発
SOIウェーハ中の欠陥評価と制御
シリコン中の欠陥評価と制御
LSI用機能性薄膜の低温形成とデバイス応用
Development of high-K gate insulating films for next generation LSI
Evaluation and Control of defects in SOI wafer
Effect of low energy ion radiation on thin silicon film
Evaluation and Control of defects in Silicon
Development of Semiconductor Materials ・ Device Technology
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MISC (104)：
LW Zhao, NH Luu, D Wang, Y Sugimoto, K Ikeda, H Nakashima, H Nakashima. Low-temperature growth of thin silicon nitride film by electron cyclotron resonance plasma irradiation. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2004. 43. 1A-B. L47-L49
JL Wang, LW Zhao, NH Luu, K Makiyama, D Wang, H Nakashima. Growth kinetics and electrical properties of ultrathin Si oxide film fabricated using Krypton-diluted oxygen plasma excited by electron cyclotron resonance. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2003. 42. 10. 6496-6501
T Joge, Araki, I, T Uematsu, T Warabisako, H Nakashima, K Matsukuma. Low-temperature boron gettering for improving the carrier lifetime in Fe-contaminated bifacial silicon solar cells with n(+)pp(+) back-surface-field structure. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2003. 42. 9A. 5397-5404
JS Gao, K Umeda, K Uchino, H Nakashima, K Muraoka. Plasma breaking of thin films into nano-sized catalysts for carbon nanotube synthesis. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. 2003. 352. 1-2. 308-313
JL Wang, T Saitou, Y Sugimoto, D Wang, LW Zhao, H Nakashima. Effect of ion mass and ion energy on low-temperature deposition of polycrystalline-Si thin film on SiO2 layer by using sputtering-type electron cyclotron resonance plasma. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 2003. 42. 5B. L511-L513
ｍore...
Patents (6)：
SOIウェーハの過渡容量測定試料構造及びSOIウェーハの評価方法
Electronic device and process for producing the same (電子デバイス及びその製造方法)09/660335
有機エレクトロルミネッセンス素子及びその製造方法
電子デバイス及びその製造法
プラズマスパッタリングによる結晶薄膜の低温成長法
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Works (9)：
シリコン中の格子欠陥評価と制御
2003 - 2004
次世代LSI用高誘電率ゲート絶縁膜の低温形成
2001 - 2003
高速LSI用歪SOIウェーハの研究開発
2001 -
Research and development of strained SOI water for high-speed LSI
2001 -
シリコン系支持膜に関する研究
1999 - 2000
ｍore...
Education (4)：
- 1983 Kyushu University
- 1983 Kyushu University Graduate School,Electrical Engineering
- 1978 Kyushu University School of Engineering
- 1978 Kyushu University Faculty of Electrical Engineering
Professional career (2)：
PHD Engineering (Kyushu University)
(BLANK) (Kyushu University)
Work history (10)：
2003/10 - - 九州大学産学連携センター(名称換) 教授
2003/10 - - Kyushu Univ. Art, Sci. and Tech. Center for
1999 - 2003 九州大学先端科学技術共同研究センター 教授
1999 - 2003 Kyushu Univ. Advanced Sci. and Tech. Center for
1994 - 1999 九州大学先端科学技術共同研究センター 助教授
1994 - 1999 Kyushu Univ. Advanced Sci. and Tech. Center for
1983 - 1994 Kyushu University School of Engineering
1983 - 1994 Kyushu Univ. Faculty of Engineering Research Associate
Cooperative Research Professor
Cooperative Research Associate Professor
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Committee career (1)：
1997 - 応用物理学会九州支部 理事
Association Membership(s) (3)：
応用物理学会九州支部
, 電子情報通信学会
, 応用物理学会
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