Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO<sub>2</sub> Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma

WANG J; SAITOU T; SUGIMOTO Y; WANG D; ZHAO L; NAKASHIMA H

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J-GLOBAL ID：200902246926347307 Reference number：03A0400221

Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO₂ Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma

スパッタリング型電子サイクロトロン共鳴プラズマを用いたSiO₂層への多結晶Si薄膜の低温蒸着に及ぼすイオン質量とイオンエネルギーの影響

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Material：
Volume： 42 Issue： 5B Page： L511-L513 Publication year： May. 15, 2003
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Applications of plasma

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Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO2 Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma

Effect of Ion Mass and Ion Energy on Low-Temperature Deposition of Polycrystalline-Si Thin Film on SiO₂ Layer by Using Sputtering-Type Electron Cyclotron Resonance Plasma