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J-GLOBAL ID：200901033486752584
Update date: Dec. 18, 2024 Morisaki Hiroshi
モリサキ ヒロシ | Morisaki Hiroshi
Clips
Former Institution /Organization Faculty of Electro-Communications Department of Electronic Engineering
About Former Institution /Organization Faculty of Electro-Communications Department of Electronic Engineering
Job title： Professor
Research field (4)：
Electric/electronic material engineering
, Crystal engineering
, Applied materials
, Basic physical chemistry
Research theme for competitive and other funds (7)： - 各種薄膜製造技術の開発
- ナノ構造半導体デバイスに関する教育・研究交流
- 半導体微粒子の触媒効果とそのエネルギー変換への応用
- 半導体超微粒子の光学的性質とその発光デバイスへの応用
- Collaboration on Nanostructured Semiconductor Device Research
Show all
- K Uchida, K Takahashi, S Kabe, S Nozaki, H Morisaki. Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3. JOURNAL OF CRYSTAL GROWTH. 2004. 272. 1-4. 658-663
- T Ichinohe, S Masaki, K Uchida, S Nozaki, H Morisaki. Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity. THIN SOLID FILMS. 2004. 466. 1-2. 27-33
- The transport mechanism in metal doped glass as a deispersion system of nanostructure and device application. Proceedings of Thin Film Materials & Devices Meeting. 2004. 75-79
- The transport mechanism in metal doped glass as a deispersion system of nanostructure and device application. Proceedings of Thin Film Materials & Devices Meeting. 2004. 75-79
- S Bhunia, K Uchida, S Nozaki, N Sugiyama, M Furiya, H Morisaki. Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of CCl3Br and quantitative analysis of the compensation mechanism in the epilayers. JOURNAL OF APPLIED PHYSICS. 2003. 93. 3. 1613-1619
- Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics
IOP Publishing Ltd 2002 - Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics
IOP Publishing Ltd 2002 - 半導体工学
近代科学社 1991 - 電子デバイス入門
技術評論社 1987
-
SiOx超微粒子薄膜の低誘電率材料への応用
2000 - 2002
- - 1967 Osaka University
- - 1967 Osaka University Graduate School, Division of Engineering
- - 1965 Osaka University
- - 1965 Osaka University Graduate School, Division of Engineering
- - 1963 Kobe University Faculty of Science Department of Physics
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- Ph. D. (Engineering) The Univ. New South Wales (The University of New South Wales, Australia)
- 学術博士 (ニューサウスウエールズ大学(豪州))
- 工学博士 (大阪大学)
- 2002 - 2004 日本ベンチャー学会 理事
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