Rchr
J-GLOBAL ID：200901057542156384
Update date: Sep. 14, 2024
Sakai Akira
サカイ アキラ | Sakai Akira
Affiliation and department：
Job title：
Professor
Research field (4)：
Inorganic materials
, Thin-film surfaces and interfaces
, Crystal engineering
, Applied materials
Research keywords (4)：
Memristor
, Nanobeam X-ray diffraction
, Nitride Semiconductor
, IV-group Semiconductor
Research theme for competitive and other funds (22)：
- 2024 - 2027 Development of high-performance crossbar array memristors for Edge AI in extreme environments
- 2024 - 2026 Development of Neural Hardware with Associative Learning Capabilities for Multi-bit Signals
- 2020 - 2024 Heterosynaptic platform functionalized by topological control of oxygen vacancy distribution in memristive devices
- 2021 - 2023 Artificial synaptic crossbar array memristors with interneuron function
- 2020 - 2023 Growth of a thick GaN crystal with extremely low resistivity by the OVPE method
- 2016 - 2021 Steering Group
- 2016 - 2021 Multiscale characterization of singularity structures and behaviors thereof
- 2017 - 2020 Synaptic platform for neuromorphic computing developed by functional defect engineering in memristive devices
- 2017 - 2019 Topological control of oxygen vacancy distribution in memristive materials for hypercomplex synaptic devices
- 2013 - 2016 Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
- 2013 - 2016 Four terminal memristor devices for correlation-based synaptic signal transduction
- 2012 - 2015 Investigation of mechanism of electrical conduction via functionalized dislocation networks in atomically-bonded metal-oxide crystals
- 2006 - 2009 Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
- 2007 - 2008 Development of carrier separation technique by conductive atomic force microscopy
- 2006 - 2008 Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process
- 2004 - 2006 Controlling deformation of strained hetero structure of group IV semiconductors for realization of ultra uniform strain fields
- 2003 - 2005 Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV
- 2001 - 2004 Development of direct observation technique of single electron trap and investigation of degradation mechanism of ultra-thin gate dielectric films
- 1999 - 2003 人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発
- 2000 - 2002 In situ transmission electron microscopy of degradation phenomena of Pb(Zrx Ti_<l-x>)O_3 thin films
- 2000 - 2002 Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI
- 2001 - 2001 熱負荷プロセスにおける異種絶縁膜界面の構造遷移機構の原子レベル解析
Show all
Papers (578)：
-
T. Hamachi, T. Tohei, Y. Hayashi, S. Usami, M. Imanishi, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai. Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction. Journal of Applied Physics. 2024. 135. 22
-
Tomoki Onabe, Zhendong Wu, Tetsuya Tohei, Yusuke Hayashi, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Takahiro Naito, Kohei Hamaya, Akira Sakai. Local strain distribution analysis in strained SiGe spintronics devices. Japanese Journal of Applied Physics. 2024. 63. 2
-
Toshikazu Sato, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai. Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate. Materials Science in Semiconductor Processing. 2023. 167
-
Yudai Nakanishi, Yusuke Hayashi, Takeaki Hamachi, Tetsuya Tohei, Yoshikata Nakajima, Shiyu Xiao, Kanako Shojiki, Hideto Miyake, Akira Sakai. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates. Journal of Electronic Materials. 2023
-
Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai. Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates. Scientific Reports. 2023. 13. 1
ｍore...
MISC (355)：
-
濱地威明, 藤平哲也, 林侑介, 宇佐美茂佳, 今西正幸, 森勇介, 隅谷和嗣, 今井康彦, 木村滋, 酒井朗. Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
山本望, 林侑介, 濱地威明, 中西悠太, 藤平哲也, 隅谷和嗣, 今井康彦, 木村滋, 正直花奈子, 三宅秀人, et al. Depth-resolved tomographic analysis on thick AlN films grown on NPSS using nanobeam X-ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
安達健太, 林侑介, 藤平哲也, 酒井朗. Gate-controlled modulation of synaptic properties in 4-terminal planar TiO2-x memristive devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
池内太志, 林侑介, 藤平哲也, 酒井朗. Development and resistive switching properties of four-terminal planer amorphous GaOx memristive devices. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
-
塩見春奈, 嶋田章宏, 藤平哲也, 林侑介, 金木奨太, 橋詰保, 今井康彦, 隅谷和嗣, 木村滋, 酒井朗. Operand analysis of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
ｍore...
Patents (43)：
Works (5)：
-
GaN結晶膜およびGaN系半導体素子(特許)
1998 -
-
半導体結晶の作製方法(特許)
1996 -
-
(]G0048[)誘電率膜キャパシタ(特許)
1995 -
-
アモルファスシリコン膜の形成方法(特許)
1993 -
-
半導体装置の製造方法(特許)
1992 -
Professional career (1)：
Awards (2)：
- 2003/03 - 財団法人大河内記念会 第49回(平成14年度)大河内賞記念賞 大容量DRAM用HSG-Siキャパシタの開発と実用化
- 1999 - 応用物理学会賞A論文賞
Return to Previous Page
