Rchr
J-GLOBAL ID：200901060191340460
Update date: Mar. 02, 2024
Keisuke Arimoto
アリモト ケイスケ | Keisuke Arimoto
Affiliation and department：
Job title：
Associate Professor
Homepage URL (1)：
http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab/
Research field (2)：
Crystal engineering
, Applied materials
Research keywords (5)：
SiGe
, シリコンゲルマニウム
, 応用物性・結晶工学
, Semiconductor Physics
, SiGe Heterostructure Devices
Research theme for competitive and other funds (18)：
- 2021 - 2024 (110)面を表面に有する歪みシリコン薄膜の酸化膜/半導体界面準位に関する研究
- 2021 - 2024 SnSの欠陥化学の探究と薄膜トランジスタへの展開
- 2020 - 2023 ダイヤモンド結晶中の遷移金属不純物と転位のインタラクション
- 2018 - 2021 イオン注入法による歪みSi/SiGe/Si(110)構造の欠陥と表面形状の制御
- 2015 - 2018 Development of high-mobility strained Si/SiGe/Si(110) heterostructure by suppression of dislocation generation
- 2014 - 2017 Developments of high mobility uniaxially strained Germanium channel devices
- 2012 - 2016 Realization of compressively strained silicon by defect control using ion implantation and application to high hole mobilty devices
- 2013 - 2015 Control of crystalline defect generation processes for realization of high-hole-mobility strained Si thin films and its application to electronic devices
- 2011 - 2012 Studies on defect formation process and electrical properties of Silicon-Carbon strained heterostructures
- 2009 - 2011 Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature
- 2006 - 2008 Study on the formation of hydrogenated silicon films and silicon nano-structural materials obtained by electron-beam-induced-chemical vapor deposition at ultra low temperature
- 2002 - Research on Group IV Ultra-high Mobility Semiconductor Devices
- Transport properties of SiGe
- Formation of SiGe thin films and their application
- Modulation of energy band structures by controlling strain
- SiGeの電気伝導特性
- 多結晶SiGe薄膜の形成とその応用
- 歪みの制御によるエネルギーバンド構造の変調
Show all
Papers (87)：
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Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto. Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures. Materials Science in Semiconductor Processing. 2023. 161. 107476-107476
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Low temperature synthesis of photoconductive BaSi2 films via mechanochemically assisted close-spaced evaporation. Mater. Adv. 2021. 2. 6713-6721
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Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto, Mai Shirakura, Kosuke Hara, Keisuke Arimoto. Discrimination between Coherent and Incoherent Interfaces using STEM Moiré. MICROSCOPY AND MICROANALYSIS. 2021. 27. 2326-2327
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Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness. JOURNAL OF CRYSTAL GROWTH. 2021. 571. 126246
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Daisuke Yazawa, Kosuke O. Hara, Junji Yamanaka, Keisuke Arimoto. Investigations on Ba diffusion and SiO evaporation during BaSi2 film formation on Si substrates by thermal evaporation. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2021. 39. 043410
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MISC (34)：
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原康祐, 塚越由花, 牧瀬啓人, 有元圭介, 星裕介, 松島悟. Effects of surface damages on current-modulating resistivity measurement of Si wafers. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
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K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, N. Usami. Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation. Materials Science in Semiconductor Processing. 2017. 72. 93-98
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K. O. Hara, C. T. Trinh, Y. Kurokawa, K. Arimoto, J. Yamanaka, K. Nakagawa, N. Usami. Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source. Thin Solid Films. 2017. 646. 546-551
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村上太陽, 有元圭介, 山中淳二, 原康祐, 山本千綾, 宇佐美徳隆, 星裕介, 有澤洋, 澤野憲太郎, 中川清和. イオン注入歪み緩和法を用いて形成したSi/Si1-xCx/Si(001)構造の結晶性評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2016. 77th. ROMBUNNO.15p-P11-8
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有澤洋, 星裕介, 有元圭介, 山中淳二, 中川清和, 澤野憲太郎, 宇佐美徳隆. イオン注入による欠陥制御を用いて作製した圧縮歪みSi/Si1-xCxヘテロ構造の熱的安定性. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2015. 76th. ROMBUNNO.13P-2W-5
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Patents (1)：
Lectures and oral presentations (112)：
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反射・透過型エリプソメトリー計測における透明基板内反射影響
(第69回応用物理学会春季学術講演会 2022)
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歪みSi/緩和 SiGe/Si(110)ヘテロ構造p-MOSFETの高正孔移動度化とリーク電流の低減
(第69回応用物理学会春季学術講演会 2022)
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機械学習を用いたBaSi2蒸着膜の組成比予測モデルの予測精度改善
(第69回応用物理学会春季学術講演会 2022)
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Si基板上BaSi2近接蒸着膜の実効キャリア寿命
(第69回応用物理学会春季学術講演会 2022)
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2段集束レンズ TEM を用いた NBD による SiGe 面間隔評価の試行
(日本顕微鏡学会 第64回シンポジウム 2021)
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Education (4)：
- - 1999 東京大学大学院
- - 1999 The University of Tokyo Graduate School, Division of Engineering Department of Applied Physics
- - 1997 The University of Tokyo
- - 1997 The University of Tokyo Faculty of Engineering Department of Applied Physics
Professional career (2)：
- Doctor of Philosophy (Engineering) (山梨大学)
- 博士(工学) (山梨大学)
Work history (5)：
- 2002/03 - University of Yamanashi
- 2002/01 - 東京大学 技術補佐員
- 2000 - 2001 Scientist, Corning Technology Center
- 2000/10 - コーニング・ジャパン株式会社 研究員
- 1999/04 - 日本テキサス・インスツルメンツ株式会社 社員
Awards (1)：
- 2019/03/16 - 日本顕微鏡学会関東支部 最優秀ポスター賞 Si(110)基板上に成長したSiGe混晶半導体の高分解能TEM観察
Association Membership(s) (2)：
応用物理学会
, The Japan Society of Applied Physics
