Rchr
J-GLOBAL ID:200901097234782713
Update date: Jun. 03, 2024
Shimura Takayoshi
シムラ タカヨシ | Shimura Takayoshi
Affiliation and department:
Job title:
Professor
Research field (6):
Optical engineering and photonics
, Applied physics - general
, Quantum beam science
, Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (8):
ゲート絶縁膜
, X線位相イメージング
, ゲルマニウム
, シリコンフォトニクス
, x-ray imaging
, electronic materials
, X線結晶学
, X-ray Crystallography
Research theme for competitive and other funds (45):
- 2022 - 2025 局所液相成長によるGeSn細線の形成とレーザーダイオードの動作実証
- 2018 - 2019 Demonstration of high sensitivity and high resolution X-ray imaging with structured X-ray light source
- 2013 - 2018 Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties
- 2016 - 2017 SOIピクセル検出器による自己像直接検出型タルボ・ロー干渉計の高度化
- 2015 - 2017 Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
- 2015 - 2016 Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivation
- 2015 - 2016 Development of Super-resolution Technique in Transmission X-ray Imaging using Embedded X-ray Targets
- 2013 - 2014 Improvement of SiO2/SiC interface quality by beam induced interface reactions
- 2012 - 2014 Development of SiC-based plasmonic transistors with Schottky source/drain
- 2012 - 2014 Fabrication of vertical strained-Ge MOSFETs by channel-last process and the electrical characterization
- 2009 - 2011 Development of light emitting devices in 1. 5μm range using germanium epitaxial layers on silicon
- 2009 - 2011 Fabrication and electrical characterization of GOI structures by rapid melt growth
- 2011 - High-k/Metal Gate材料及び新プロセス開発に関する研究
- 2008 - 2010 Measurements of the strain in strained Si wafers by X-ray diffraction methods
- 2010 - 高性能SiC-MOSFET用立体ゲート構造の研究開発
- 2010 - 機能性基板/生体超分子界面反応メカニズムの解明とその制御技術の研究
- 2009 - 高機能化原子制御製造プロセス教育研究拠点
- 2009 - シリコン上ゲルマニウムエピタキシャル層を用いた1.5ミクロン帯発光素子の開拓
- 2009 - X線回折による歪シリコンウエハの歪量測定に関する研究
- 2007 - 2008 原子制御プロセスによる超薄MOS構造の作製とその伝導特性および界面物性の解析
- 2008 - 機能性基板/生体超分子界面反応メカニズムの解明とその制御技術の研究
- 2008 - 原子制御プロセスによる超薄MOS構造の作製とその伝導特性および界面物性の解析
- 2007 - 2007 高性能SiCパワーエレクトロニクス実現に向けた理想MOS構造作製プロセスの創成
- 2007 - 金属電極/高誘電率絶縁膜の界面物性に関する研究
- 2007 - 高性能SiCパワーエレクトロクス実現に向けたMOS構造作製とプロセス
- 2005 - 2006 Formation of Buried Oxide Layer in Epitaxial Silicon Wafers
- 2004 - 2006 Fabrication of Large-Grained Polycrystalline Si Thin Films by Controlling Nucleation Sites on Glass Substrates
- 2006 - ガラス基板表面の核形成点制御による大粒径多結晶薄膜形成法の開発
- 2005 - ガラス基板表面の核形成点制御による大粒径多結晶薄膜形成法の開発
- 2004 - 原子論的生産技術の創出拠点
- 2003 - 原子論的生産技術の創出拠点
- 2002 - 完全表面の創成
- 1999 - 2001 X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces
- 2001 - 完全表面の創成
- 1998 - 2000 マイクロサテライトにおけるトライボロジー技術と宇宙環境からの影響評価に関する研究
- 1998 - 1999 シリコン熱酸化膜の長距離秩序構造の解析による酸化機構の研究
- 1997 - 1998 Development of the Angular Resolved Reflection High Energy Electron Diffraction and the Electron Impact Mass Spectroscopy for the Studies of Three Dimensional Structure of Surfaces
- 1997 - 1998 Development of room-temperature oxidation method of Si due to pulsed hyperthermal atomic oxygen beam
- 1997 - 1998 Development of the quantitative characterization method for microstructures on semiconductor surfaces by using X-ray diffraction
- 1996 - 1997 Synergistic effect on spacetribology in the low earch orbit
- 1995 - 1996 Development of quantitative characterization method of microstructures by X-ray scattering
- 1995 - 1996 Control of electric charge at the interface in the RTO and low temperature oxidation of SOI
- 1995 - 1995 X線CTR散乱法によるシリコン熱酸化膜中の結晶相の面方位依存性
- X-ray Diffraction Study of Crystal Surfaces Interfaces and thin films
- Characterization of Semiconductor Materials by Synchrotron Radiation X-ray.
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Papers (543):
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Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Characterization of nitrided SiC(1-100) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy. Materials Science in Semiconductor Processing. 2024. 175. 108251-108251
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Sosuke Iwamoto, Takayoshi Shimura, Heiji WATANABE, Takuma Kobayashi. Oxygen-related defects in 4H-SiC from first principles. Applied Physics Express. 2024
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Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro KUTSUKI, Takayoshi Shimura, Heiji WATANABE, Takuma Kobayashi. Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures. Applied Physics Express. 2024
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Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-011003
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Tae-Hyeon Kil, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Design of SiO2/4H-SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing. AIP Advances. 2023. 13. 11. 115304-1-115304-5
more...
MISC (107):
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T. Shimura, H. Oka, T. Hosoi, Y. Imai, S. Kimura, H. Watanabe. Fabrication of Tensile-strained Single-crystalline GeSn Wires on Amorphous Quartz Substrates by Local Liquid-phase Crystallization. Proceedings of The 8th International Symposium on Advanced Science and Technology of Silicon Materials. 2022. 143-146
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Interface engineering in GaN metal-oxide-semiconductor device with SiO2 gate insulator. 2018. 118. 110. 11-14
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Watanabe Kenta, Terashima Daiki, Nozaki Mikito, Yamada Takahiro, Nakazawa Satoshi, Ishida Masahiro, Anda Yoshiharu, Ueda Tetsuzo, Yoshigoe Akitaka, Hosoi Takuji, et al. SiO. Jpn. J. Appl. Phys. 2018. 57. 6
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野崎幹人, 寺島大貴, 渡邉健太, 山田高寛, 吉越章隆, 細井卓治, 志村考功, 渡部平司. 放射光光電子分光法によるGaN上GaOx層の熱脱離過程の評価. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th. ROMBUNNO.18p-C302-7
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山田高寛, 寺島大貴, 渡邉健太, 野崎幹人, 山田永, 高橋言諸, 清水三聡, 吉越章隆, 細井卓治, 志村考功, et al. SiO2/GaN MOSデバイスの信頼性向上に向けた界面酸化層の制御. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th. ROMBUNNO.18p-C302-8
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Patents (31):
Books (9):
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Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Waters
The Physics and Chemistry of SiO<sub>2</sub> and the Si-SiO<sub>2</sub> Interface 4,(The Electrochemical Society, INC) 2000
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Analysis of Orderd Structure of Buried Oxide Layers in SIMOX Waters
SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES (]G0001[) (]G0010[)(THE ELECTROCHEMICAL SOCIETY, INC) 1999
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Advances in the Understanding of Crystal Growth Mechanisms
Elsevier Science 1997
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Thermally Oxidized Layers on Si-wafers-Surface X-ray Scattering and Field Ion Microscopy-(共著)
Advances in the Understanding of Crystal Gronth Mechanisms 1997
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Structure of thermal Oxide on(111)and(011)Si Wafers(共著)
Advanced Science and Technology of Silicon Materials 1996
more...
Lectures and oral presentations (67):
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犠牲酸化プロセスによる SiC MOSFET の電気特性劣化
(第71回応用物理学会春季学術講演会 2024)
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Si基板上GeSn細線のレーザー溶融結晶化における下地SiO2膜厚とレーザー走査速度の最適化
(第71回応用物理学会春季学術講演会 2024)
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低温追酸化によるSiO2/SiC界面発光中心の密度制御と電気特性との相関
(第71回応用物理学会春季学術講演会 2024)
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第一原理計算に基づく4H-SiC中酸素関連欠陥の系統的調査
(第71回応用物理学会春季学術講演会 2024)
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Optimization of Laser Scanning Conditions and Thickness of SiO2 Underlayer in Laser-induced Liquid-phase Crystallization of GeSn Wires on Si substrates
(2024)
more...
Works (6):
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ガラス基板表面の核形成点制御による大粒径多結晶薄膜形成法の開発
2004 -
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原子論的生産技術の創出拠点
2004 -
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X線を用いた酸化Siナノ構造の歪みの定量解析
1999 -
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ナノメータ・デバイス対応のSOIウェーハに対する極限評価技術の開発
1999 -
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Characterization of Oxidized Si Nano-structure by X-ray Dittraction
1999 -
more...
Professional career (1):
- Ph.D(Eng.) (Nagoya University)
Work history (13):
- 2024/04 - 現在 Osaka University
- 2024/04 - 現在 Waseda University Graduate School of Information Production and Systems Professor
- 2020/04 - 2024/03 Osaka University Graduate School of Engineering . Associate Professor
- 2007/01 - 2024/03 Osaka University, Associate Professor
- 2007/04/01 - 2020/03/31 Osaka University Graduate School of Engineering Division of Science and Biotechnology Associate Professor
- 2007/04/01 - 2011/03/31 Osaka University Center for Advanced Science and Innovation
- 2007/02/01 - 2007/03/31 Osaka University Graduate School of Engineering Division of Science and Biotechnology Associate Professor
- 2005/08/01 - 2007/01/31 Osaka University Graduate School of Engineering Division of Precision Science & Technology and Applied Physics Research Assistant
- 1993/04 - 2007/01 大阪大学助手
- 2007 - - 大阪大学・准教授
- 2007 - - Osaka University, Associate Professor
- 2005/04/01 - 2005/07/31 Osaka University Graduate School of Engineering Division of Science and Biotechnology Research Assistant
- 1998/08/01 - 2005/03/31 Osaka University Graduate School of Engineering Research Assistant
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Awards (4):
- 2016/09 - 公益社団法人 応用物理学会 第8回(2016年秋季)応用物理学会 Poster Award
- 2016/03 - 応用物理学会 第7回(2016年春季)応用物理学会 Poster Award
- 2014/03 - 応用物理学会 第3回(2014年春季)応用物理学会 Poster Award
- 2008/11 - The Japan Society of Applied Physics, Japan 2008 IWDTF Best Poster Award
Association Membership(s) (11):
日本放射光学会
, 応用物理学会
, 日本結晶学会
, 日本物理学会
, The Japanese Society for Synchrotron Radiation Research
, The Japan Society of Applied Physics
, The Crystallographic Society of Japan
, The Physical Society of Japan
, 放射光学会
, 結晶学会
, 物理学会
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