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J-GLOBAL ID：201001028699237524
Update date: Dec. 18, 2024 Kuzuhara Masaaki
Kuzuhara Masaaki
Clips- 2014 - MIS構造窒化物半導体トランジスタの低損失高耐圧化に関する研究
- 2012 - 高温・高周波エレクトロニクスの基礎研究
- 2011 - 高温・高周波エレクトロニクスの基礎研究
- 2009 - 固相C60及びグラフェンを用いた炭素系デバイスの基礎研究
- 2008 - 固相C60及びグラフェンを用いた炭素系デバイスの基礎研究
Show all
- A. Yamamoto, K. Kanatani, S. Makino, M. Kuzuhara. Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructure with high electron mobility (~1500 cm2V-1s-1): Impacts of reactive-ion etching-damaged layer removal. Jpn. J. Appl. Phys. 2018. 57. 125501-(5)
- Ryo Hattori, Osamu Oku, Ryuichi Sugie, Kazutsugu Murakami, Masaaki Kuzuhara. Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy. Applied Physics Express. 2018. 11. 7. 075501-(3)
- H. Tokuda, K. Suzuki, J. T. Asubar, M. Kuzuhara. Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe. Jpn. J. Appl. Phys. 2018. 57. 071001-(4)
- Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara. Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors. Applied Physics Express. 2018. 11. 5. 054102
- Akio Yamamoto, Shinya Makino, Keito Kanatani, Masaaki Kuzuhara. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300cm2V%1s%1). Japanese Journal of Applied Physics. 2018. 57. 4. 045502
- Maiko Hatano, Yuya Taniguchi, Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara. Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack. APPLIED PHYSICS EXPRESS. 2014. 7. 4. 044101
- Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara. Over 3000 cm(2)V(-1) s(-1) room temperature two-dimensional electron gas mobility by annealing Ni/Al deposited on AlGaN/GaN heterostructures. APPLIED PHYSICS EXPRESS. 2014. 7. 4. 041001
- Akio Yamamoto, Md. Tanvir Hasan, Akihiro Mihara, Norihiko Narita, Naoteru Shigekawa, Masaki Kuzuhara. Phase separation of thick (similar to 1 mu m) InxGa1-XN (x similar to 0.3) grown on AIN/Si(111): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN. APPLIED PHYSICS EXPRESS. 2014. 7. 3. 035502
- K.Akira, T.Asano, H.Tokuda, M.Kuzuhara. Reducd Current Collapse in AlGan/GaN HEMTs Using 3-Dimensional Field Plate Structure. IWN 2014. 2014. p.45
- Ryo Maeta, Hirokuni Tokuda, Masaaki Kuzuhara. Analysis of Time Dependent Current Collapse in AlGaN/GaN HEMTs. 2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM). 2014. 149-152
Books (7)：
- 化学便覧 応用化学編 第7版
2013 - Power Device
Maruzen 2011 ISBN:9784621083390 - エコマテリアルハンドブック
2006 - New Developments of Semiconductor Materials and Devices for Hifg Frequency Applications
2006 - マイクロ波回路技術者および研究者のためのCADプログラム
1998
-
Enhancement-mode AlGaN/GaN vertical trench MOS-HEMTs using an AlGaN regrown layer
(IWN-2018 2018) -
Study on breakdown field in Fe-doped semi-insulating GaN substrates
(IWN-2018 2018) -
AlGaN/GaN HEMTs fabricated using AlGaN regrowth on R=E-GaN surfaces
(IWN-2018 2018) -
Threshold voltage hysteresis in GaN-based vertical trench MOSFETs
(IWN-2018 2018) -
Impact of air annealing on performance of AlGaN/GaN MISHEMTs with recessed gate structures
(IWN-2018 2018)
-
MIS構造窒化物半導体トランジスタの低損失高耐圧化に関する研究, 基盤研究(C)(一般)
2014 - -
高温・高周波エレクトロニクスの基礎研究, 基盤研究(C)(一般)
2012 - -
窒化物系化合物半導体基板・エピタキシャル成長技術の開発
2007 - 2010 -
固相C60及びグラフェンを用いた炭素系デバイスの基礎研究, 基盤研究(B)(一般)
2009 - -
MOVPE成長InNの高品質化と電子輸送特性の解明, 基盤研究(C)一般
2007 -
- 1979 - 1981 Kyoto University Graduate School of Engineering Department of Electrical Engineering
- 1974 - 1979 Kyoto University Department of Electrical Engineering
- Doctor of Engineering (Kyoto University)
- 1998/07 - 2004/03 NEC Corporation, Central Research Laboratory Senior Manager
- 1991/07 - 1998/06 NEC Corporation Manager
- 1981/04 - 1991/06 NEC Corporation technical staff
- 1987/08 - 1988/08 University of Illinois Visiting Researcher
- 2013 - 応用物理学会 フェロー会員
- 2007 - 2008 電子情報通信学会 電子デバイス研究専門委員会 委員長
- 2005 - 2006 電子情報通信学会 電子デバイス研究会 副委員長
- 2005 - 2006 電子情報通信学会 評議員
- 2006 - 応用物理学会 編集委員
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- 2014/04 - APEX/JJAP 2013年度APEX/JJAP編集貢献賞
- 2014/01 - 福井大学 優秀教員2013年度
- 2013/09 - JSAP 応用物理学会フェロー
- 2010/03 - APEX/JJAP 2009年度APEX/JJAP編集貢献賞
- 2010/01 - 福井大学 優秀教員2009年度
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