Phase separation of thick (~1μm) In<sub>x</sub>Ga<sub>1-x</sub>N (x~0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

YAMAMOTO Akio; YAMAMOTO Akio; HASAN Tanvir; HASAN Tanvir; MIHARA Akihiro; MIHARA Akihiro; NARITA Norihiko; SHIGEKAWA Naoteru; KUZUHARA Masaki

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J-GLOBAL ID：201402207830996295 Reference number：14A0552084

Phase separation of thick (~1μm) In_xGa_1-xN (x~0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

AlN/Si (111)上に成長させた厚さ(~1μm)In_xGa_1-xN(x ~ 0.3)の相分離金属的In-GaとGaNリッチなInGaNの同時出現

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Volume： 7 Issue： 3 Page： 035502.1-035502.4 Publication year： Mar. 2014
JST Material Number： F0599C ISSN： 1882-0778 CODEN： APEPC4 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Materials of solid-state devices

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Phase separation of thick (~1μm) InxGa1-xN (x~0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN

Phase separation of thick (~1μm) In_xGa_1-xN (x~0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In-Ga and GaN-rich InGaN