Rchr
J-GLOBAL ID：201101099420432049
Update date: Sep. 20, 2022
Tetsuji Imai
イマイ テツジ | Tetsuji Imai
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Affiliation and department：
Meisei University School of Information Science
About Meisei University School of Information Science
Search "Meisei University School of Information Science"
Other affiliations (3)：
旧所属 明星大学
理工、情報 学部 教授
旧所属 電気通信大学
電子工学科 教授
旧所属 NTT電気通信研究所
半導体研究室長
Homepage URL (1)：
http://kaken.nii.ac.jp/d/r/50143714.ja.html
Research field (2)：
Crystal engineering
, Applied materials
Research keywords (2)：
半導体デバイス・電子物性
, 化合物半導体
Papers (28)：
Y.Takano, S.Fuke, T. Imai. Two-step growth of InP on GaAs subustrates by metalorganic vapor phase epitaxy. J.Cryst.Growth. 1996. 169. 4. 621-624
S.Fuke, Y.Takano, T. Imai. Lattice relaxation of AlGaAs rayers grown on GaAs(100) substrate plane by organometallic vapor phase epitaxy. J.Appl.Phys. 1995. 77. 1. 420-422
S FUKE, Y SUZUKI, K KUWAHARA, Y TAKANO, T IMAI. ORIENTATION DEPENDENCES OF THE GROWTH-RATE AND IODINE INCORPORATION FOR THE ZNSE GROWTH BY HYDROGEN TRANSPORT VAPOR-PHASE EPITAXY. JOURNAL OF CRYSTAL GROWTH. 1994. 144. 3-4. 367-370
Tetsuji IMAI, Shunro Fuke. Experimental and Computer-Simulated Characteristics of Al0.3 Ga0.7As/GaAs Heterojunctions. Bulletin of Meisei Univ. 1993. 1. 33-50
M.Umemura,S.Fuke, T. Imai. Morphology of AlGaAs layer grown on GaAs (111)A substrate plane by organo-metallic vapor phase epitaxy. J.Appl.phys. 1992. 72. 1. 313-315
ｍore...
MISC (14)：
Y.Takano, S.Fuke, Tetsuji Imai. Two-step growth of InP on GaAs subustrates by metalorganic vapor phase epitaxy. J.Cryst.Growth. 1996. 169. 4. 621-624
S.Fuke, Y.Takano, Tetsuji Imai. Lattice relaxation of AlGaAs rayers grown on GaAs(100) substrate plane by organometallic vapor phase epitaxy. J.Appl.Phys. 1995. 77. 1. 420-422
S FUKE, Y SUZUKI, K KUWAHARA, Y TAKANO, T IMAI. ORIENTATION DEPENDENCES OF THE GROWTH-RATE AND IODINE INCORPORATION FOR THE ZNSE GROWTH BY HYDROGEN TRANSPORT VAPOR-PHASE EPITAXY. JOURNAL OF CRYSTAL GROWTH. 1994. 144. 3-4. 367-370
M.Umemura, S.Fuke, Tetsuji Imai. Morphology of AlGaAs layer grown on GaAs (111)A substrate plane by organo-metallic vapor phase epitaxy. J.Appl.phys. 1992. 72. 1. 313-315
S.Fuke, Tetsuji Imai. Lowering of the growth temperature by the iodine incorporation for vapor phase epitaxy of ZnS. J.Appl.Phys. 1992. 71. 7. 3611-3613
ｍore...
Professional career (1)：
工学博士 (大阪大学)
Work history (4)：
1992/04 - Meisei University School of Information Science, Department of Electronics and Computer Sciences
1989/04 - 1992/03 Meisei University School of Science and Engineering
1984/10 - 1989/03 Shizuoka University Faculty of Engineering
1967 - 日本電信電話公社 電気通信研究所 半導体部品研究室 室長
Committee career (5)：
1979 - 1987 電子通信学会 半導体・トランジスタ研究専門委員会 委員・顧問委員
1973/01 - 1980/12 IEEE ISSCC ( International Soid-State Circuits Conference ) アジア委員会 論文委員
1971/01 - 1974/03 応用物理学会 応用電子物性分科会 幹事長
1972/01 - 1973/12 応用物理学会 理事
1963/04 - 1968/03 応用物理学会 会誌編集委員
Awards (1)：
1985/11 - 日刊工業新聞社 第一回技術・科学図書優秀賞 『化合物半導体デバイス 〔I〕、〔II〕』 工業調査会 (1959/1960)
Association Membership(s) (2)：
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS.
, THE JAPAN SOCIETY OF APPLIED PHYSICS
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