Rchr
J-GLOBAL ID:201201021966719061   Update date: Dec. 18, 2024

Akazawa Masamichi

アカザワ マサミチ | Akazawa Masamichi
Affiliation and department:
Research field  (5): Electric/electronic material engineering ,  Thin-film surfaces and interfaces ,  Electronic devices and equipment ,  Crystal engineering ,  Applied materials
Research keywords  (17): GaN ,  surface passivation ,  interface ,  surface ,  XPS ,  MOS ,  Al2O3 ,  InAlN ,  nitride semiconductor ,  界面準位 ,  InGaAs ,  GaAs ,  MIS ,  テラヘルツ ,  InP ,  デバイス ,  ヘテロ界面
Research theme for competitive and other funds  (42):
  • 2024 - 2027 Improvement of effective electron mobility in inversion-type n-channel gallium nitride MOSFET by interface control
  • 2023 - 2026 窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発
  • 2023 - 2025 イオン注入したGaN結晶の表面近傍点欠陥評価
  • 2021 - 2025 Creation of innovative core technology for power electronics
  • 2022 - 2023 GaN結晶の表面近傍点欠陥の評価・低減に関する研究
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Papers (123):
  • Masanobu Takahashi, Yining Jiao, Masamichi Akazawa. Effects of SiO2 cap annealing at 800 °C on Ga-polar n-type and p-type GaN (0001) surfaces compared by X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics. 2024. 63. 11. 110905-1-110905-4
  • Yining Jiao, Masanobu Takahashi, Taketomo Sato, Masamichi Akazawa. Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface. Japanese Journal of Applied Physics. 2024. 63. 9. 09SP19-1-09SP19-6
  • Yining Jiao, Takahide Nukariya, Umi Takatsu, Tetsuo Narita, Tetsu Kachi, Taketomo Sato, Masamichi Akazawa. Reduction in Gap State Density near Valence Band Edge at Al2O3/p-type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing. Physica Status Solidi (B) Basic Research. 2024. 2400025-1-2400025-9
  • Yuliu Luo, Yuki Hatakeyama, Masamichi Akazawa. Effects of low-temperature annealing on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance-voltage measurement. Japanese Journal of Applied Physics. 2023. 62. 12. 126501-1-126501-6
  • Ryota Ochi, Takuya Togashi, Yoshito Osawa, Fumimasa Horikiri, Hajime Fujikura, Kazunari Fujikawa, Takashi Furuya, Ryota Isono, Masamichi Akazawa, Taketomo Sato. Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques. Applied Physics Express. 2023. 16. 9. 091002-1-091002-2
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MISC (44):
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Patents (1):
  • 電界効果トランジスタおよびその製造方法
Books (2):
  • 第2版 応用物理ハンドブック 応用物理学会編
    Maruzen 2002
  • 電子情報通信ハンドブック 6-13編 新概念集積回路
    オーム社 1998
Lectures and oral presentations  (272):
  • Effects of Long-Term Low-Temperature Annealing Prior to Activation Annealing on Near-Conduction-Band-Edge Gap States in Vicinity of Mg-Ion-Implanted GaN Surface
    (32nd International Colloquium on Scanning Probe Microscopy (ICSPM32, Hotel Monterey Edelhof Sapporo, Sapporo, Japan, Nov. 18-20, 2024) 2024)
  • X-Ray Photoelectron Spectroscopy Monitoring of Fermi Level Position at Mg-Doped p-Type GaN Surface During MOS Interface Formation
    (32nd International Colloquium on Scanning Probe Microscopy (ICSPM32, Hotel Monterey Edelhof Sapporo, Sapporo, Japan, Nov. 18-20, 2024) 2024)
  • Investigation of Charges Originated from Near-Surface Defects I p-type GaN Using X-ray Photoelectron Spectroscopy and MOS Diodes
    (International Workshop on Nitride Semiconductors 2024 (IWN2024, Hilton Hawaiian Village, O’ahu, Hawai’i, USA, Nov. 3-8, 2024) 2024)
  • Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN Studied Using MOS Structures
    (2024 International Conference on Solid State Devices and Materials (SSDM2024, Arcrea Himeji, Himeji, Hyogo, Japan, Sept. 1 - 4, 2024). 2024)
  • Investigation of Charges Originated from Near-Surface Defects in p-type GaN Using X-ray Photoelectron Spectroscopy and MOS Diodes
    (Compound Semiconductor Week 2024 (CSW2024, Lund University, Lund, Sweden, June 3-6, 2024). 2024)
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Education (2):
  • 1988 - 1988 Hokkaido University Graduate School of Enigineering Division of Electrical Engineering
  • 1984 - 1988 Hokkaido University Faculty of Enigineering Department of Electrical Engineering
Professional career (1):
  • 博士(工学) (北海道大学)
Work history (2):
  • 1995/04 - 現在 Hokkaido University Associate Professor
  • 1988/11 - 1995/03 Hokkaido University Research Associate
Committee career (8):
  • 2019/08 - 現在 The 14th International Conference on Nitride Semiconductors (ICNS-14) ICNS-14 Local Arrangement Comittee
  • 1995/05 - 現在 電子情報通信学会 ソサイエティ論文誌編集委員会査読委員
  • 2020/09 - 2021/11 International Conference on Solid-State Devices and Materials Secretary of Steering Committee
  • 2014/11 - 2015/10 2015年固体素子・材料コンファレンス 実行委員
  • 2002/05 - 2003/05 電子情報通信学会 シリコン材料・デバイス研究専門委員会幹事
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Awards (7):
  • 2024/09 - 第10回北大・部局横断シンポジウム実行委員会 ベストポスター賞 窒化ガリウムのMOSトランジスタ応用のための界面制御の研究
  • 2024/03 - 16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 17th International Conference on Plasma-Nano Technology & Science / 13th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (ISPlasma2024/IC-PLANTS2024/APSPT-13, Nagoya University, Nagoya, Japan, March 3-7, 2024) The Best Poster Presentation Award "Effects of SiO<sub>2</sub>-Cap Annealing Prior to Interface Formation on Properties of Al<sub>2</sub>O<sub>3</sub>/p-type GaN Interfaces"
  • 2023/03 - 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/ 16th International Conference on Plasma-Nano Technology & Science (ISPlasam2023/IC-PLANTS2023, Gifu University, Gifu, Japan, March 5-9, 2023) The Best Poster Presentation Awards "Impact of ultra-high-pressure annealing on interface state density distribution near conduction band at Al<sub>2</sub>O<sub>3</sub>/Mg-ion-implanted GaN interface"
  • 2016/09 - JSAP JSAP Paper Award "Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors"
  • 2013/05 - CSManTech 2013 Paper Awards (He Bong Kim Award) "Characterization and Control of Insulated Gate Interfaces"
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Association Membership(s) (3):
THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN ,  THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS. ,  THE JAPAN SOCIETY OF APPLIED PHYSICS
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