Rchr
J-GLOBAL ID:201201021966719061
Update date: Dec. 18, 2024
Akazawa Masamichi
アカザワ マサミチ | Akazawa Masamichi
Affiliation and department:
Research field (5):
Electric/electronic material engineering
, Thin-film surfaces and interfaces
, Electronic devices and equipment
, Crystal engineering
, Applied materials
Research keywords (17):
GaN
, surface passivation
, interface
, surface
, XPS
, MOS
, Al2O3
, InAlN
, nitride semiconductor
, 界面準位
, InGaAs
, GaAs
, MIS
, テラヘルツ
, InP
, デバイス
, ヘテロ界面
Research theme for competitive and other funds (42):
- 2024 - 2027 Improvement of effective electron mobility in inversion-type n-channel gallium nitride MOSFET by interface control
- 2023 - 2026 窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発
- 2023 - 2025 イオン注入したGaN結晶の表面近傍点欠陥評価
- 2021 - 2025 Creation of innovative core technology for power electronics
- 2022 - 2023 GaN結晶の表面近傍点欠陥の評価・低減に関する研究
- 2020 - 2021 パワーデバイス向け窒化物半導体上シリコン熱酸化膜形成技術の確立
- 2016 - 2021 Program for research and development of next-generation semiconductor to realize energysaving society
- 2016 - 2021 特異構造を含む異種接合の界面制御と電子デバイス展開
- 2015 - 2018 高温熱処理アルミナ超薄膜による絶縁体/窒化インジウムアルミニウム界面の制御と応用
- 2012 - 2015 Control of Fermi level pinning at surfaces and interfaces of InAlN
- 2009 - 2012 Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure
- 2008 - 2008 化合物半導体MIS界面準位に関するピンニング・スポット面内分布モデル
- 2006 - 2007 GaN-based Chemical Sensors and Their On-chip Integration Using Nanowire Networks
- 2006 - 2006 電界移動型量子ドットを用いた室温動作高速・超低消費電力単電子スイッチ素子の研究
- 2004 - 2006 Research on inter-ubiquitous-chip communication circuits using terahertz electromagnetic wave
- 2004 - 2005 Research on a highly efficient semiconductor THz emitting source using a metal thin-film mesh
- 2004 - 2005 カオス多重による超大容量光通信の研究
- 2002 - 2004 Surface/interface control of high-frequency and high-power transistors based on GaN materials
- 2001 - 2003 Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates
- 2001 - 2003 Development of insulating system with low dielectric constant, high dielectric strength a-C:F film coated conductor prepared by plasma CVD as alternatives to SF_6
- 2001 - 2002 可逆計算デバイスの実現に関する基礎的研究
- 1999 - 1999 ボルテックスを利用した機能回路の開拓
- 1998 - 1999 Single-electron device based on the majority logic.
- 1997 - 1998 Implementation of Ultra Micro Boltzmann Machine Neuron
- 1997 - 1998 "Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"
- 1997 - 1998 High Speed InP Schottky Power Rectifier
- 1996 - 1997 Single-electron devices based on the binary decision diagram.
- 1996 - 1997 Cellular-Automaton Circuits Using Single-Electron-Tunneling Junctions
- 1996 - 1996 超高密度多値メモリ集積回路の実現に関する基礎的研究
- 1995 - 1996 Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices
- 1995 - 1996 Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height
- 1995 - 1996 "A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"
- 1994 - 1995 Fabrication and Characterization of Self-organized Quantum Nano-structures.
- 1994 - 1995 Study on Supcr-High Efficicncy InGaAs/InP Solar Ccll With Controlled Surface
- 1994 - 1994 InGaAs2次元電子ガスMISFETの試作
- 1993 - 1994 Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.
- 1992 - 1993 Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode
- 1992 - 1993 Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant
- 1991 - 1992 A Novel Contactless and Nondestructive Measurement Method of Surface State Density on Semiconductor Free Surface, and Control of Their Surfaces
- 1991 - 1992 A new MIS Interface Control Technology for Fabrication of High Spatial Resolution InGaAs Change Coupled Devices for Imaging
- 1990 - 1991 Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors
- 1988 - 1989 New Waveguides for Microwave Monolithic Integrated Circuits Using Distributed Parameter Effects of Semiconductor Carriers
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Papers (123):
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Masanobu Takahashi, Yining Jiao, Masamichi Akazawa. Effects of SiO2 cap annealing at 800 °C on Ga-polar n-type and p-type GaN (0001) surfaces compared by X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics. 2024. 63. 11. 110905-1-110905-4
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Yining Jiao, Masanobu Takahashi, Taketomo Sato, Masamichi Akazawa. Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface. Japanese Journal of Applied Physics. 2024. 63. 9. 09SP19-1-09SP19-6
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Yining Jiao, Takahide Nukariya, Umi Takatsu, Tetsuo Narita, Tetsu Kachi, Taketomo Sato, Masamichi Akazawa. Reduction in Gap State Density near Valence Band Edge at Al2O3/p-type GaN Interface by Photoelectrochemical Etching and Subsequent SiO2 Cap Annealing. Physica Status Solidi (B) Basic Research. 2024. 2400025-1-2400025-9
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Yuliu Luo, Yuki Hatakeyama, Masamichi Akazawa. Effects of low-temperature annealing on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance-voltage measurement. Japanese Journal of Applied Physics. 2023. 62. 12. 126501-1-126501-6
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Ryota Ochi, Takuya Togashi, Yoshito Osawa, Fumimasa Horikiri, Hajime Fujikura, Kazunari Fujikawa, Takashi Furuya, Ryota Isono, Masamichi Akazawa, Taketomo Sato. Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques. Applied Physics Express. 2023. 16. 9. 091002-1-091002-2
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MISC (44):
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Chiba Masahito, Nakano Takuma, Akazawa Masamichi. Effects of Fabrication Process on Electrical Properties of InAlN MOS Structures with ALD-Al_2O_3. IEICE technical report. Electron devices. 2013. 113. 329. 101-105
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YAMAZAKI Yusuke, INAFUNE Koji, AKAZAWA Masamichi, SANO Eiichi. Evaluation of Sub-terahertz Periodic Structure in a Coplanar Stripline. IEICE technical report. Electron devices. 2005. 104. 693. 41-46
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INAFUNE Koji, AKAZAWA Masamichi, SANO Eiichi. A Low-Loss Coplanar Waveguide for the THz Region and Its Application to Electromagnetic-Bandgap Filters. IEICE technical report. Microwaves. 2004. 104. 296. 45-49
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Akazawa Masamichi, Hasegawa Hideki. Application of UHV Contactless C-V Measurement to the Surface of SOI. Proceedings of the Society Conference of IEICE. 2002. 2002. 2. 59-59
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ONO Tomoyuki, SUDA Yoshiyuki, AKAZAWA Masamichi, SUGAWARA Hirotake, SAKAI Yosuke, SUZUKI Kaoru. Evaluation of carbon thin films deposited by oxygen plasma assisted PLD method. 2001. 2001. 381-386
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Patents (1):
Books (2):
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第2版 応用物理ハンドブック 応用物理学会編
Maruzen 2002
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電子情報通信ハンドブック 6-13編 新概念集積回路
オーム社 1998
Lectures and oral presentations (272):
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Effects of Long-Term Low-Temperature Annealing Prior to Activation Annealing on Near-Conduction-Band-Edge Gap States in Vicinity of Mg-Ion-Implanted GaN Surface
(32nd International Colloquium on Scanning Probe Microscopy (ICSPM32, Hotel Monterey Edelhof Sapporo, Sapporo, Japan, Nov. 18-20, 2024) 2024)
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X-Ray Photoelectron Spectroscopy Monitoring of Fermi Level Position at Mg-Doped p-Type GaN Surface During MOS Interface Formation
(32nd International Colloquium on Scanning Probe Microscopy (ICSPM32, Hotel Monterey Edelhof Sapporo, Sapporo, Japan, Nov. 18-20, 2024) 2024)
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Investigation of Charges Originated from Near-Surface Defects I p-type GaN Using X-ray Photoelectron Spectroscopy and MOS Diodes
(International Workshop on Nitride Semiconductors 2024 (IWN2024, Hilton Hawaiian Village, O’ahu, Hawai’i, USA, Nov. 3-8, 2024) 2024)
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Effects of Moderate-Temperature Annealing on Near-Surface Defects in Mg-Implanted GaN Studied Using MOS Structures
(2024 International Conference on Solid State Devices and Materials (SSDM2024, Arcrea Himeji, Himeji, Hyogo, Japan, Sept. 1 - 4, 2024). 2024)
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Investigation of Charges Originated from Near-Surface Defects in p-type GaN Using X-ray Photoelectron Spectroscopy and MOS Diodes
(Compound Semiconductor Week 2024 (CSW2024, Lund University, Lund, Sweden, June 3-6, 2024). 2024)
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Education (2):
- 1988 - 1988 Hokkaido University Graduate School of Enigineering Division of Electrical Engineering
- 1984 - 1988 Hokkaido University Faculty of Enigineering Department of Electrical Engineering
Professional career (1):
Work history (2):
- 1995/04 - 現在 Hokkaido University Associate Professor
- 1988/11 - 1995/03 Hokkaido University Research Associate
Committee career (8):
- 2019/08 - 現在 The 14th International Conference on Nitride Semiconductors (ICNS-14) ICNS-14 Local Arrangement Comittee
- 1995/05 - 現在 電子情報通信学会 ソサイエティ論文誌編集委員会査読委員
- 2020/09 - 2021/11 International Conference on Solid-State Devices and Materials Secretary of Steering Committee
- 2014/11 - 2015/10 2015年固体素子・材料コンファレンス 実行委員
- 2002/05 - 2003/05 電子情報通信学会 シリコン材料・デバイス研究専門委員会幹事
- 2002/04 - 2003/03 応用物理学会 シリコンテクノロジー研究分科会常任出版幹事
- 2000/11 - 2002/05 電子情報通信学会 シリコン材料・デバイス研究専門委員会幹事補佐
- 1995/05 - 2000/10 電子情報通信学会 シリコン材料・デバイス研究専門委員会専門員
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Awards (7):
- 2024/09 - 第10回北大・部局横断シンポジウム実行委員会 ベストポスター賞 窒化ガリウムのMOSトランジスタ応用のための界面制御の研究
- 2024/03 - 16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 17th International Conference on Plasma-Nano Technology & Science / 13th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (ISPlasma2024/IC-PLANTS2024/APSPT-13, Nagoya University, Nagoya, Japan, March 3-7, 2024) The Best Poster Presentation Award "Effects of SiO<sub>2</sub>-Cap Annealing Prior to Interface Formation on Properties of Al<sub>2</sub>O<sub>3</sub>/p-type GaN Interfaces"
- 2023/03 - 15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/ 16th International Conference on Plasma-Nano Technology & Science (ISPlasam2023/IC-PLANTS2023, Gifu University, Gifu, Japan, March 5-9, 2023) The Best Poster Presentation Awards "Impact of ultra-high-pressure annealing on interface state density distribution near conduction band at Al<sub>2</sub>O<sub>3</sub>/Mg-ion-implanted GaN interface"
- 2016/09 - JSAP JSAP Paper Award "Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors"
- 2013/05 - CSManTech 2013 Paper Awards (He Bong Kim Award) "Characterization and Control of Insulated Gate Interfaces"
- 1998/10 - the 5th International Conference on Soft Computing and Information/ Intelligent Systems (IIZUKA '98) Best Paper Award "A Functional Neuro-MOS Circuit for Implementing Cellular-Automaton Picture-Processing Devices"
- 1990/08 - International Conference on Solid State Devices and Materials SSDM Young Researcher Award "In<sub>0.53</sub>Ga<sub>0.47</sub>As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO<sub>2</sub> Insulator"
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Association Membership(s) (3):
THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN
, THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS.
, THE JAPAN SOCIETY OF APPLIED PHYSICS
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